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IRLL024NTRPBF
MOSFET N-CH 55V 3.1A SOT223
- 제조업체
- Mfr.부분 #IRLL024NTRPBF
- 패키지 TO-261-4,TO-261AA
- 데이터시트 IRLL024NTRPBF DataSheet
- 재고 있음5528
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 3.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4V, 10V |
| RdsOn(Max)@IdVgs | 65mOhm @ 3.1A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15.6 nC @ 5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 510 pF @ 25 V |
| PowerDissipation(Max) | 1W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
개요
Description
To provide an accurate introduction, more information about the context and specific area of focus for IRLL024NTRPBF would be needed.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to moderate voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 24A, allowing it to support high current loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.025 ohms, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for efficient switching with low drive voltages.
5. Package Type: It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Commonly used in power management circuits, motor control, and other applications requiring efficient switching performance.
Overall, the IRLL024NTRPBF is recognized for its efficiency, reliability, and versatility in various electronic applications.
Package
Pinout
1. Gate (G): Controls the MOSFET operation; voltage applied here turns the device on or off.
2. Drain (D): The output terminal where the load is connected; current flows from the drain when the MOSFET is on.
3. Source (S): The terminal that connects to the ground or negative side of the circuit; current flows out of the source when the MOSFET is on.
4. Tab/Case: Used for heat dissipation; typically connected to the source in surface mount configurations.
This device is designed for low on-resistance and high-speed switching applications, making it suitable for power management, motor control, and other switching applications in electronic circuits.
Manufacturer
Application
Equivalent
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