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IRLMS6802TRPBF
MOSFET P-CH 20V 5.6A MICRO6
- 제조업체
- Mfr.부분 #IRLMS6802TRPBF
- 패키지 SOT23-6
- 데이터시트 IRLMS6802TRPBF DataSheet
- 재고 있음7182
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 5.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 50mOhm @ 5.1A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16 nC @ 5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 1079 pF @ 10 V |
| PowerDissipation(Max) | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro6™(TSOP-6) |
개요
Description
The device features a compact SO-8 package, making it suitable for space-constrained designs. Its fast switching capabilities help reduce power losses and improve thermal performance. The MOSFET is designed to handle high voltages (up to 60V), making it versatile for a range of electronic circuits.
Overall, the IRLMS6802TRPBF is ideal for designers looking to optimize efficiency and reliability in their power management circuits.
Features
1. Low RDS(on): Offers low on-resistance (typically 0.017 Ω at VGS = 10V), enhancing efficiency and reducing heat generation.
2. High Voltage Rating: Supports a maximum drain-source voltage (VDS) of 60V, making it suitable for various power applications.
3. High Current Capacity: Capable of handling continuous drain currents up to 54A, enabling robust performance in demanding conditions.
4. Fast Switching Speed: Designed for quick switching, beneficial for applications in power supplies and motor drives.
5. Logic Level Gate Drive: Can be fully enhanced with a low gate-source voltage (VGS), allowing compatibility with low-voltage logic circuits.
6. Thermal Performance: Features a TO-220 package for effective heat dissipation, ensuring reliability under load.
These characteristics make the IRLMS6802TRPBF ideal for applications such as power management, converters, and motor control.
Package
Pinout
Pin Count: 8
Pin Functions:
1. Gate 1 (G1) - Controls the first MOSFET (Q1).
2. Drain 1 (D1) - The drain connection for the first MOSFET (Q1).
3. Source 1 (S1) - The source connection for the first MOSFET (Q1).
4. Gate 2 (G2) - Controls the second MOSFET (Q2).
5. Drain 2 (D2) - The drain connection for the second MOSFET (Q2).
6. Source 2 (S2) - The source connection for the second MOSFET (Q2).
7. Common Source (CS) - Common source connection for both MOSFETs.
8. N/C (No Connect) - Not connected internally.
These MOSFETs are commonly used in power management applications, providing low on-resistance and fast switching capabilities.
Manufacturer
Application
Equivalent
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