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IRS21867STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
- 제조업체
- Mfr.부분 #IRS21867STRPBF
- 패키지 SOIC 8N
- 데이터시트 IRS21867STRPBF DataSheet
- 재고 있음7372
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 4A, 4A |
| InputType | CMOS, TTL |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 22ns, 18ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
개요
Description
Key features include:
- High Side and Low Side Driver: Capable of driving both high-side and low-side transistors with independent input pins, providing flexibility in circuit design.
- Voltage Range: Operates with a wide range of input voltages, supporting up to 600V, making it suitable for high-voltage applications.
- Fast Switching: Offers fast switching capabilities with propagation delays typically around 120 nanoseconds, facilitating efficient power conversion.
- Integrated Bootstrap Diode: Simplifies the design by reducing the need for external components, thus improving reliability and efficiency.
- Protection Features: Includes features like under-voltage lockout and shoot-through prevention to enhance reliability and protect the circuit.
Overall, the IRS21867STRPBF is valued for its robustness and efficiency in driving power transistors in demanding environments.
Features
1. High and Low-Side Drive Capability: It can drive both high-side and low-side MOSFETs/IGBTs, making it suitable for half-bridge and full-bridge applications.
2. Low Propagation Delay: It offers a fast propagation delay, typically around 120 ns, facilitating high-frequency operation.
3. Floating Channel: The high-side channel is designed to work with a floating voltage up to 600V, making it suitable for high-voltage applications.
4. Bootstrap Circuitry: Integrated bootstrap functionality supports high-side driving without the need for a separate isolated power supply.
5. Under-Voltage Lockout (UVLO): Both high-side and low-side drivers have UVLO protection to prevent operation under insufficient voltages.
6. Shoot-Through Protection: It includes built-in dead-time and shoot-through prevention to avoid simultaneous conduction of both high-side and low-side transistors.
7. CMOS Schmitt-Triggered Inputs: The inputs are compatible with standard CMOS/TTL logic levels.
8. Compact Package: Available in a small SOIC-8 package, it offers a compact solution for space-constrained designs.
These features make the IRS21867STRPBF suitable for a wide range of power conversion and motor control applications.
Package
Pinout
The pin configuration is as follows:
1. VCC - Logic and low-side gate drive supply voltage.
2. IN - Logic input for controlling the high and low-side gate outputs.
3. LIN - Logic input for the low-side gate driver.
4. HIN - Logic input for the high-side gate driver.
5. VSS - Logic ground.
6. LO - Low-side gate drive output.
7. VS - High-side floating supply return.
8. HO - High-side gate drive output.
This IC features shoot-through protection, under-voltage lockout, and a floating channel designed for bootstrap operation. It is suitable for high-frequency switching applications.
Manufacturer
Application
Equivalent
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