이미지는 참조용만

IS42S32160C-75BLI

Name: IS42S32160C-75BLI
Rating: 4.7 (12 reviews)

IC DRAM 512MBIT PARALLEL 90WBGA

제조업체
Mfr.부분 #IS42S32160C-75BLI
패키지 90-LFBGA
데이터시트
재고 있음7430

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Supplier	ISSI, Integrated Silicon Solution Inc
Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM
MemorySize	512Mb (16M x 32)
MemoryInterface	Parallel
ClockFrequency	133 MHz
AccessTime	6 ns
Voltage-Supply	3V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	90-LFBGA

개요

Description

IS42S32160C-75BLI is a legacy memory IC from ISSI (Integrated Silicon Solution, Inc.). It is a high-density dynamic RAM device in a lead-free TSOP-like package, used as a component memory in embedded systems and modules.
Key points:
- Type: SDRAM/Dynamic RAM (legacy generation) with a multiplexed address interface.
- Data width: typically 16-bit data bus (part of an IS42S32160 family variant).
- Speed grade: -75, i.e., about 75 ns access time.
- Voltage: generally 3.3V operation (typical for this family).
- Features: auto refresh, burst mode options, page mode, and row/column addressing typical of SDRAMs of its era.
- Package: BLI denotes the specific package/lead-free code.
Note: exact organization (capacity), pinout, timing parameters, and supported burst lengths should be confirmed from the official datasheet for IS42S32160C-75BLI. If you want, I can summarize the datasheet once you provide a link or confirm the exact variant you’re using.

Features

Key features of IS42S32160C-75BLI (typical for this family):
- 32K × 16-bit static RAM (0.5 Mbit total)
- Access time: 75 ns
- Asynchronous operation with separate chip enable (CE#), output enable (OE#), and write enable (WE#)
- Tri-state outputs
- Static RAM (no refresh required)
- Power/voltage: specified in datasheet (variant-dependent; commonly 3.3V or 5V)
- Low standby current when CE# is deasserted
- Industrial temperature variant: -40°C to 85°C (part of the BLI family)
- Package: leadless ball-grid array (BLI)
Note: Always refer to the exact datasheet for precise Vcc, temperature range, and pinout.

Package

TSOP II (54-pin) plastic surface-mount package.

Pinout

- Pin count: 32 pins (in the standard package)
- Function: 32K × 16-bit static RAM (SRAM) with 3-state outputs. It uses address inputs A0–A14, data I/O DQ0–DQ15, and control signals CS#, OE#, WE#. Speed grade is 75 ns (IS42S32160C-75BLI).

Manufacturer

Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
What kind of company: A fabless semiconductor company that designs and markets memory ICs (SRAM, DRAM, etc.) used in various applications.

Application

IS42S32160C-75BLI is a high-speed DRAM used as main memory and buffers in various systems. Typical application areas include:
- Embedded systems and consumer electronics (set-top boxes, digital cameras, TVs/AV devices, game consoles)
- PC/ workstation memory subsystems
- Graphics/video buffers and display pipelines
- Networking and telecom equipment (routers, switches, base stations)
- Automotive and industrial control systems needing robust SDRAM
(75 ns speed; leadless/bga packaging variants.)

Equivalent

IS42S32160C-75BLI is a 32K×16, 75 ns, 5 V SRAM. Close cross-references (same size/speed) include:
- Alliance Memory AS6C32160-75 (32K×16, 75 ns)
- Renesas μPD32160 (pin-compatible family)
- ISSI IS42S32160C-75 variants (same device family)
Note: exact substitution depends on packaging and pinout; verify voltage, footprint, and datasheet before swapping.