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IS42S32400F-6BLI
IC DRAM 128MBIT PAR 90TFBGA
- 제조업체
- Mfr.부분 #IS42S32400F-6BLI
- 패키지
- 데이터시트
- 재고 있음6987
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mbit |
| Memory Organization | 4M x 32 |
| Memory Interface | Parallel |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-TFBGA (8x13) |
| Base Product Number | IS42S32400 |
| Clock Frequency | 166 MHz |
| Access Time | 5.4 ns |
개요
Description
This DRAM is designed for synchronous operation, meaning it can operate in sync with the system clock, allowing for faster data transfer rates compared to asynchronous DRAM types. The '-6BLI' suffix indicates specific features, such as speed grade and package type. Typically, these chips are offered in various packaging options, enabling flexibility in design and integration.
Overall, the IS42S32400F-6BLI is a reliable choice for applications requiring moderate memory capacity with efficient performance characteristics.
Features
- Type: DDR SDRAM, 3.2V operation.
- Density: 256Mb organized as 4 banks of 8 bits x 16.
- Speed: Operates at 133 MHz with a data transfer rate of 2.1 Gb/s.
- Package: Offered in a 66-pin TSOP II package for efficient space utilization.
- Functionality: Supports burst lengths of 2, 4, or 8 and has a 4n prefetch architecture.
- Latency: Low latency for improved performance in memory-intensive applications.
- Temperature Range: Typically operates in an industrial temperature range, enhancing reliability in various environments.
- Applications: Ideal for consumer electronics, networking equipment, and other computing devices requiring reliable and fast memory.
This chip is well-suited for applications that demand high-speed data processing and efficiency.
Package
Pinout
Key functions:
1. Data Bus: 8-bit wide data input/output.
2. Address Bus: Supports row and column addressing for selecting memory locations.
3. Control Signals: Includes various control pins such as Chip Select (CS), Clock Enable (CKE), Write Enable (WE), and Output Enable (OE) for managing read/write operations and refreshing.
4. Power Management: Features pins for power supply and ground connections, ensuring proper operation within specified electrical characteristics.
This device is designed for high-speed memory applications, suitable for use in various electronic devices requiring efficient data storage and retrieval.
Manufacturer
Application
Equivalent
1. MT48LC32M16A2 - Micron
2. HY58G256LF - Hynix
3. K4S641632B - Samsung
4. EMM 256M DRAM - Various manufacturers
Ensure to check specifications like voltage and timing settings for compatibility.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
지불 기간은 100% 사전 지불입니다.
현재, 우리는 아래 지불 방법만 받아들입니다.:
1. PayPal
2. 신용/직불 카드
3. 전선 전송
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