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IS43DR16320E-25DBLI
IC DRAM 512MBIT PAR 84TWBGA
- 제조업체
- Mfr.부분 #IS43DR16320E-25DBLI
- 패키지
- 데이터시트
- 재고 있음5366
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mbit |
| Memory Organization | 32M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 84-TFBGA |
| Supplier Device Package | 84-TWBGA (8x12.5) |
| Base Product Number | IS43DR16320 |
| Clock Frequency | 400 MHz |
| Access Time | 400 ps |
개요
Description
This DRAM is built using advanced 25nm technology, which enhances its efficiency and performance while reducing power consumption. It operates on a 3.3V power supply and includes features like a burst mode for improved data transfer rates. The “-BLI” suffix typically indicates a specific package type or grade, often denoting a lead-free, environmentally friendly option.
The IS43DR16320E-25DBLI is ideal for embedded systems and applications requiring reliable, high-speed memory, making it a popular choice among engineers and designers in the electronics industry.
Features
1. Memory Type: DDR3 SDRAM
2. Capacity: 2 Gigabits (GB)
3. Configuration: 1 x 16 bits
4. Speed: Operates at a data rate of up to 1600 MT/s (Mega Transfers per second)
5. Voltage: Operates at a core voltage of 1.5V, with support for 1.35V for low-power applications.
6. Package: 78-ball FBGA (Fine Ball Grid Array), making it suitable for compact designs.
7. Timing: CL=25 for improved efficiency in data access times.
8. Features: Supports burst lengths of 4 and 8, along with an asynchronous reset for enhanced flexibility.
9. Applications: Ideal for use in various computing devices, including laptops, desktops, and other embedded systems.
This chip effectively balances performance, power consumption, and form factor, making it a solid choice for modern memory needs.
Package
Pinout
1. Data Pins (DQ0-DQ15): These are used for data input and output.
2. Address Pins (A0-A12): These are used to select memory locations.
3. Control Pins (CS, RAS, CAS, WE): Control signals for enabling the chip, row address strobe, column address strobe, and write enable.
4. Clock Pins (CLK, CLK#): Used for synchronizing data transfers.
5. Power Pins (VDD, VSS): Provide power supply and ground.
6. Chip Select Pins (CS): Used for chip enable/disable functionality.
7. Byte Enable Pins (BYTE): Allow control over data access in byte format.
This DRAM operates with a 25 ns access time and is designed for high-performance applications.
Manufacturer
Application
Equivalent
1. Hynix H5TQ2G63AFR
2. Micron MT41J128M16HA
3. Samsung K4B4G1646D
4. Nanya NT5CB256M16DP
Ensure to verify specifications like speed, package type, and voltage before substituting.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
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