IS43DR16640B-3DBLI

The IS43DR16640B-3DBLI is a high-performance, low-power DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip designed for various applications, including telecommunications, networking, and consumer electronics. It features a 1 Gigabit (Gb) capacity with a 16-bit data bus, allowing for efficient data transfer rates.
Operating at a voltage range of 1.5V, it provides enhanced energy efficiency compared to earlier generations. The chip supports various data rates, commonly reaching up to 1600 Mbps, which is essential for applications requiring fast data access and processing.
The "BLI" designation typically indicates specific packaging and temperature range characteristics, making it suitable for both commercial and industrial applications. Additionally, the device includes multiple features for reliability and performance, such as on-chip data masking and burst lengths, which optimize memory operation.
Overall, the IS43DR16640B-3DBLI is a versatile memory solution for modern digital systems, balancing performance, power consumption, and capacity.

The IS43DR16640B-3DBLI is a DDR3 SDRAM memory module featuring a 4GB capacity organized as 512 Meg x 64 bits. It operates at a voltage of 1.5V, compliant with DDR3 specifications. Key features include:
1. Data Rate: Supports data rates up to 1600 MT/s.
2. Speed Grade: Classifies as a DDR3-1600 part.
3. Package: Available in a 78-ball FBGA package.
4. Burst Length: Supports a burst length of 8.
5. Latency: Typically has low latency (CL=11 or lower).
6. Temperature Range: Designed for industrial applications with a temperature range of -40°C to +95°C.
7. ECC Support: May include error correction capabilities for data integrity.
8. Compatibility: Compatible with various DDR3 controllers, making it suitable for a range of applications including servers and networking equipment.
Overall, the IS43DR16640B-3DBLI is designed for high-performance memory applications requiring reliability and efficiency.

The IS43DR16640B-3DBLI is packaged in a 66-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for high-density memory applications, providing efficient thermal and electrical performance.

The IS43DR16640B-3DBLI is a DDR3 SDRAM memory chip with a total pin count of 78. It is organized as 4 banks of 16 bits each, providing a total memory capacity of 2 gigabits. The primary functions of the pins include data input/output (DQ), address input (A), control signals (such as CKE, CS, RAS, CAS, WE), power supply (VDD and VSS), and clock signals (CLK, CLK#). The device supports a range of functionalities such as burst read/write operations, pipelining, and auto-refresh, which are essential for high-performance memory applications in computing and mobile devices.

The IS43DR16640B-3DBLI is manufactured by ISSI (Integrated Silicon Solution, Inc.), a company known for designing and supplying high-performance memory solutions. ISSI specializes in various types of semiconductor memory products, including SRAM, DRAM, and flash memory. Founded in 1988 and headquartered in San Jose, California, ISSI serves numerous markets, including automotive, industrial, medical, and consumer electronics. The company focuses on providing innovative memory solutions that meet the evolving needs of its customers across various industries.

The IS43DR16640B-3DBLI is a 64Mb DDR SDRAM memory chip, commonly used in applications such as consumer electronics, mobile devices, networking equipment, industrial automation, and automotive systems. Its high-speed performance and low power consumption make it suitable for tasks requiring fast data processing, including gaming consoles, tablets, smartphones, and multimedia devices.

Equivalent products to the IS43DR16640B-3DBLI chip include the Micron MT48LC16M16A2P-75 and the Nanya NT5CB128M16DP-3C. These alternatives also feature a 1Gb DDR2 SDRAM architecture with similar specifications, including data bus width and speed. Always verify compatibility with your specific application before substitution.