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IS61WV25616BLL-10BLI

Name: IS61WV25616BLL-10BLI
Rating: 4.7 (12 reviews)

IC SRAM 4MBIT PARALLEL 48MINIBGA

제조업체
Mfr.부분 #IS61WV25616BLL-10BLI
패키지 48-TFBGA
데이터시트 IS61WV25616BLL-10BLI DataSheet
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365 일 보장

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사양

Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	SRAM
Technology	SRAM - Asynchronous
MemorySize	4Mb (256K x 16)
MemoryInterface	Parallel
WriteCycleTime-WordPage	10ns
AccessTime	10 ns
Voltage-Supply	2.4V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	48-TFBGA

개요

Description

The IS61WV25616BLL-10BLI is a high-performance, low-power CMOS static random-access memory (SRAM) chip produced by ISSI (Integrated Silicon Solutions Inc.). It features a memory capacity of 2 Megabytes (256K words x 16 bits), making it suitable for various applications requiring quick data access. The device operates with a supply voltage of 2.7V to 3.6V, which aids in reducing power consumption and enhancing battery life in portable devices.
With a fast access time of 10 nanoseconds, this SRAM ensures high-speed data retrieval, ideal for cache memory and other performance-sensitive applications. The chip offers a simple interface for read and write operations, making it easy to integrate into various systems. It is available in a compact package, enhancing its suitability for space-constrained designs.
Overall, the IS61WV25616BLL-10BLI is an efficient choice for applications in telecommunications, networking, and consumer electronics where quick data processing and low power consumption are critical.

Features

The IS61WV25616BLL-10BLI is a high-performance CMOS static RAM (SRAM) device featuring a 2 Meg x 16-bit organization, allowing for a total memory capacity of 4 Megabits. Key features include:
1. Access Time: 10 ns, providing quick data retrieval.
2. Operating Voltage: Typically operates at 3.0V to 3.6V, suitable for various low-power applications.
3. Low Power Consumption: Designed for low active and standby power usage, enhancing energy efficiency.
4. Asynchronous Operation: Simplifies integration in systems needing fast response times.
5. Wide Operating Range: Supports a broad range of temperatures and operating conditions.
6. Data Retention: Maintains data integrity during power-down conditions.
7. Fast Write Cycle Times: Efficient write capabilities enhance performance for high-speed applications.
This SRAM is ideal for use in networking, telecommunications, and consumer electronics where speed and reliability are critical.

Package

The IS61WV25616BLL-10BLI is packaged in a 54-pin TSOP II (Thin Small Outline Package), which is commonly used for memory devices. This package type provides a compact design suitable for high-density applications.

Pinout

The IS61WV25616BLL-10BLI is a 256K x 16-bit synchronous dynamic RAM (SDRAM) with a total of 44 pins.
### Pin Functions:
- Address Pins (A0-A17): Used to select the memory location.
- Data Pins (DQ0-DQ15): Bi-directional data bus for reading from and writing to the memory.
- Control Pins:
- CLK: Clock input for synchronization.
- CKE: Clock enable for power management.
- CS: Chip select, enables the device for communication.
- RAS: Row address strobe for row selection.
- CAS: Column address strobe for column selection.
- WE: Write enable, for write operations.
- Baud Pins (BA0, BA1): Bank address pins for selecting the memory bank.
- VDD/VSS: Power supply and ground pins.
The device operates at a maximum clock frequency of 100 MHz, allowing for high-speed data access in various applications.

Manufacturer

The IS61WV25616BLL-10BLI is manufactured by ISSI, or Integrated Silicon Solutions, Inc. ISSI is a semiconductor company that specializes in the design and production of high-performance memory and analog ICs (integrated circuits). Founded in 1988, the company is known for its SRAM, DRAM, and Flash memory products, which are used in various applications, including automotive, telecommunications, and consumer electronics. ISSI is recognized for its focus on high-quality, reliable memory solutions, catering to both commercial and industrial markets.

Application

The IS61WV25616BLL-10BLI is a 256K x 16-bit synchronous SRAM, commonly used in high-performance applications such as networking equipment, telecommunications, digital video systems, and industrial control. Its fast access times make it suitable for cache memory, buffering, and data storage in embedded systems and high-speed computing devices. Additionally, it is utilized in automotive applications and consumer electronics where rapid data retrieval is essential.

Equivalent

The IS61WV25616BLL-10BLI is a 256Mb (32MB) DDR SDRAM chip. Equivalent products include:
1. Micron MT48LC16M16A2P-75
2. Samsung K4S561632D-TC75
3. Hynix HY57V161620BTP-75
These alternatives offer similar specifications, such as data width and density, but always check for specific application compatibility before replacement.