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IS61WV51216BLL-10MLI

Name: IS61WV51216BLL-10MLI
Rating: 4.7 (12 reviews)

IC SRAM 8MBIT PARALLEL 48MINIBGA

제조업체
Mfr.부분 #IS61WV51216BLL-10MLI
패키지 48-TFBGA
데이터시트 IS61WV51216BLL-10MLI DataSheet
재고 있음4183

+BOM은 RFQ는

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365 일 보장

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사양

Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	SRAM
Technology	SRAM - Asynchronous
MemorySize	8Mb (512K x 16)
MemoryInterface	Parallel
WriteCycleTime-WordPage	10ns
AccessTime	10 ns
Voltage-Supply	2.4V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	48-TFBGA

개요

Description

The IS61WV51216BLL-10MLI is a 512Mb (64MB) static random-access memory (SRAM) device manufactured by ISSI (Integrated Silicon Solutions, Inc.). It features a wide data bus of 16 bits and operates from a single supply voltage, typically between 2.7V and 3.6V. This SRAM is designed for high-speed applications, providing access times as low as 10 nanoseconds, making it suitable for various embedded and memory-intensive applications.
The device is organized as 32K words by 16 bits, and it supports both asynchronous read and write operations. It is available in multiple package options, including a 48-pin TSOP (Thin Small Outline Package), which facilitates easy integration into circuit boards. The IS61WV51216BLL-10MLI is ideal for use in networking, telecommunications, automotive, and industrial applications where reliability and speed are crucial.
Key features include low power consumption, enabling battery-operated devices, and a simple control interface, making it user-friendly for engineers.

Package

The IS61WV51216BLL-10MLI is packaged in a 54-pin TSOP II (Thin Small Outline Package) format. This type of package is designed for high-density memory chips and provides efficient space utilization on circuit boards.

Pinout

The IS61WV51216BLL-10MLI is a 512K x 16-bit synchronous dynamic random-access memory (SDRAM) device with a total of 54 pins.
### Pin Functions:
1. Address Inputs (A0-A18): 19 pins used to select the memory address.
2. Data Inputs/Outputs (DQ0-DQ15): 16 pins for data input and output.
3. Data Mask (DQML): 1 pin for data masking.
4. Bank Select (BA0, BA1): 2 pins to select the bank.
5. Chip Select (CS): 1 pin to enable or disable the device.
6. R/W (Read/Write): 1 pin to indicate the operation mode.
7. Clock (CLK): 1 pin for synchronization.
8. Clock Enable (CKE): 1 pin to enable or disable the clock.
9. Write Enable (WE): 1 pin to control write operations.
10. Output Enable (OE): 1 pin to control output.
11. Reset (RESET): 1 pin for resetting the device.
12. VDD/VSS: Power supply and ground pins.
This configuration allows for efficient data storage and retrieval in various applications.

Manufacturer

The IS61WV51216BLL-10MLI is manufactured by Integrated Silicon Solution, Inc. (ISSI). ISSI is a semiconductor company that specializes in designing and manufacturing high-performance memory products, including DRAM and SRAM. The company focuses on providing solutions for various applications such as consumer electronics, telecommunications, automotive, and industrial markets. Founded in 1988, ISSI is known for its innovations in memory technology and has a strong presence in the global semiconductor industry.

Application

The IS61WV51216BLL-10MLI is a high-performance SRAM chip commonly used in applications such as networking equipment, telecommunications, automotive systems, embedded systems, and consumer electronics. Its fast access times and low power consumption make it suitable for cache memory, data buffering, and real-time processing tasks in various industrial and commercial devices.

Equivalent

The IS61WV51216BLL-10MLI is a 512K x 16 bit synchronous SRAM. Equivalent products include:
1. MT18LSD51216 (Micron)
2. CY3S25610 (Cypress)
3. IDT71V516S (Integrated Device Technology)
4. K4S560832F (Samsung)
Always verify specifications for compatibility in your application.