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IS61WV51216BLL-10TLI

Name: IS61WV51216BLL-10TLI
Rating: 4.7 (12 reviews)

IC SRAM 8MBIT PARALLEL 44TSOP II

제조업체
Mfr.부분 #IS61WV51216BLL-10TLI
패키지 44-TSOP
데이터시트 IS61WV51216BLL-10TLI DataSheet
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사양

Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	SRAM
Technology	SRAM - Asynchronous
MemorySize	8Mb (512K x 16)
MemoryInterface	Parallel
WriteCycleTime-WordPage	10ns
AccessTime	10 ns
Voltage-Supply	2.4V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	44-TSOP (0.400, 10.16mm Width)

개요

Description

The IS61WV51216BLL-10TLI is a high-performance CMOS static random access memory (SRAM) chip manufactured by ISSI. It features a 512K x 16-bit architecture, providing a total of 1 megabit of memory. This device operates with a single supply voltage of 3.3V and is designed for low power consumption, making it suitable for battery-operated devices.
Key specifications include a maximum access time of 10 nanoseconds, allowing fast data retrieval, and it supports both asynchronous and synchronous operations. The SRAM is organized in a dual-port configuration, enabling simultaneous read and write operations, which enhances data throughput.
The chip is available in a compact 44-pin TSOP-II package, facilitating easy integration into various applications, such as telecommunications, networking, and consumer electronics. Its robust design ensures reliability and durability, making it a preferred choice for system designers needing efficient and effective memory solutions.

Package

The IS61WV51216BLL-10TLI is offered in a 48-pin TSOP II (Thin Small Outline Package) type package. This package type is designed for high-density memory devices and allows for efficient space utilization on PCBs.

Pinout

The IS61WV51216BLL-10TLI is a 512K x 16-bit (or 1M x 16-bit) asynchronous SRAM chip. It features a total of 44 pins.
Pin Functions:
- Data Inputs/Outputs (DQ0-DQ15): 16 bits of data.
- Address Inputs (A0-A18): 19 address lines to access memory locations.
- Chip Enable (CE): Activates the memory chip.
- Output Enable (OE): Controls the data output.
- Write Enable (WE): Controls the writing of data to the memory.
- Burst Control (LB, UB): Lower and upper byte enables for data access.
- Vcc: Power supply (typically +3.3V).
- GND: Ground connection.
- NC (No Connect): Pins not connected internally.
This SRAM is commonly used in applications requiring fast data access and temporary storage.

Manufacturer

The IS61WV51216BLL-10TLI is manufactured by Integrated Silicon Solution, Inc. (ISSI). ISSI is a semiconductor company that specializes in the design and production of high-performance memory products, including SRAM, DRAM, and flash memory solutions. Founded in 1988, the company targets various applications, such as automotive, industrial, consumer electronics, and telecommunications. ISSI is known for its focus on innovative memory solutions and reliability, serving a global market with a commitment to quality and performance.

Application

The IS61WV51216BLL-10TLI is a 512Mb (64MB) SRAM memory chip commonly used in applications such as networking equipment, telecommunications, industrial automation, automotive systems, and consumer electronics. It supports high-speed data processing and is ideal for cache memory, buffering, and data storage in systems requiring quick access and reliability.

Equivalent

The IS61WV51216BLL-10TLI is a 512K x 16-bit synchronous dynamic RAM (SDRAM) chip. Equivalent products include:
1. MT48LC512M16A2 (Micron)
2. K4S561632D (Samsung)
3. HY57V641620 (Hynix)
4. IS61WV51216BLL-10T (ISSI, same family)
Ensure to verify specifications like voltage, timing, and package type for compatibility.