IXBX75N170

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IXBX75N170

IGBT 1700V 200A 1040W PLUS247

  • 제조업체
  • Mfr.부분 #IXBX75N170
  • 패키지 TO-247-3
  • 데이터시트
  • 재고 있음5025

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사양

Package Tube
Series BIMOSFET™
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 1700 V
Current-Collector(Ic)(Max) 200 A
Current-CollectorPulsed(Icm) 580 A
Vce(on)(Max)@VgeIc 3.1V @ 15V, 75A
Power-Max 1040 W
InputType Standard
GateCharge 350 nC
ReverseRecoveryTime(trr) 1.5 µs
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3 Variant

개요

Description

The IXBX75N170 is a high-performance N-channel MOSFET designed for power applications. This device features a low on-resistance (R_DS(on)), which minimizes power loss and enhances efficiency in switching circuits. With a maximum drain-source voltage (V_DS) of 170 volts and a continuous drain current (I_D) rating of 75 amps, it is suitable for various applications, including power supplies, motor drives, and industrial automation.
The IXBX75N170's fast switching speeds make it ideal for high-frequency applications, while its rugged design ensures reliability under demanding conditions. Additionally, its thermally efficient package enables effective heat dissipation, further improving performance in real-world applications.
Engineered for ease of use, this MOSFET comes with a gate-to-source threshold voltage that allows for straightforward interfacing with standard control circuits. Overall, the IXBX75N170 is a versatile component for engineers seeking efficient solutions in power management and electronic design.

Features

The IXBX75N170 is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 170V, making it suitable for high-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 75A, allowing it to handle substantial loads efficiently.
3. Low On-Resistance: With a low R_DS(on) value, it minimizes conduction losses, enhancing overall efficiency in power conversion systems.
4. Fast Switching Speed: The IXBX75N170 enables rapid switching capabilities, making it ideal for applications like switching regulators and converters.
5. Thermal Management: It features a robust thermal performance, with a suitable junction-to-case thermal resistance, ensuring reliable operation under varying thermal conditions.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy heat dissipation and integration into existing designs.
Overall, the IXBX75N170 is optimized for high-efficiency, high-voltage applications in industrial and consumer electronics.

Package

The IXBX75N170 is typically available in a TO-247 package type. This package is designed for high-power applications, providing effective heat dissipation and ease of mounting on heatsinks.

Pinout

The IXBX75N170 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a total of 3 pins.
The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied to the gate opens the channel, allowing current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the negative side of the load. It serves as the return path for the current flowing through the MOSFET.
The IXBX75N170 is known for its low on-resistance and high-speed switching capabilities, making it suitable for applications such as power supplies, converters, and motor drivers.

Manufacturer

The IXBX75N170 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in semiconductor devices and power management solutions. The company designs and manufactures a wide range of products, including power MOSFETs, IGBTs, diodes, and other components used in various applications like industrial, automotive, and renewable energy systems. IXYS is known for its focus on high-performance semiconductor technologies that enable efficient energy conversion and management.

Application

The IXBX75N170 is a high-voltage, high-speed power MOSFET typically used in applications such as power converters, switching power supplies, motor drives, and renewable energy systems like solar inverters. Its characteristics make it suitable for efficient power management in industrial automation, electric vehicles, and telecom equipment, where reliability and performance are crucial.

Equivalent

The IXBX75N170 is a high-voltage MOSFET. Equivalent products include:
1. Infineon IRF2010
2. STMicroelectronics STP75NF170
3. ON Semiconductor NTP75N60
Make sure to check the specifications, such as voltage rating, current rating, and RDS(on) to ensure compatibility for your specific application.

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