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IXBX75N170
IGBT 1700V 200A 1040W PLUS247
- 제조업체
- Mfr.부분 #IXBX75N170
- 패키지 TO-247-3
- 데이터시트
- 재고 있음5025
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tube |
| Series | BIMOSFET™ |
| ProductStatus | Active |
| Voltage-CollectorEmitterBreakdown(Max) | 1700 V |
| Current-Collector(Ic)(Max) | 200 A |
| Current-CollectorPulsed(Icm) | 580 A |
| Vce(on)(Max)@VgeIc | 3.1V @ 15V, 75A |
| Power-Max | 1040 W |
| InputType | Standard |
| GateCharge | 350 nC |
| ReverseRecoveryTime(trr) | 1.5 µs |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 Variant |
개요
Description
The IXBX75N170's fast switching speeds make it ideal for high-frequency applications, while its rugged design ensures reliability under demanding conditions. Additionally, its thermally efficient package enables effective heat dissipation, further improving performance in real-world applications.
Engineered for ease of use, this MOSFET comes with a gate-to-source threshold voltage that allows for straightforward interfacing with standard control circuits. Overall, the IXBX75N170 is a versatile component for engineers seeking efficient solutions in power management and electronic design.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 170V, making it suitable for high-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 75A, allowing it to handle substantial loads efficiently.
3. Low On-Resistance: With a low R_DS(on) value, it minimizes conduction losses, enhancing overall efficiency in power conversion systems.
4. Fast Switching Speed: The IXBX75N170 enables rapid switching capabilities, making it ideal for applications like switching regulators and converters.
5. Thermal Management: It features a robust thermal performance, with a suitable junction-to-case thermal resistance, ensuring reliable operation under varying thermal conditions.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy heat dissipation and integration into existing designs.
Overall, the IXBX75N170 is optimized for high-efficiency, high-voltage applications in industrial and consumer electronics.
Package
Pinout
The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied to the gate opens the channel, allowing current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the negative side of the load. It serves as the return path for the current flowing through the MOSFET.
The IXBX75N170 is known for its low on-resistance and high-speed switching capabilities, making it suitable for applications such as power supplies, converters, and motor drivers.
Manufacturer
Application
Equivalent
1. Infineon IRF2010
2. STMicroelectronics STP75NF170
3. ON Semiconductor NTP75N60
Make sure to check the specifications, such as voltage rating, current rating, and RDS(on) to ensure compatibility for your specific application.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
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