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IXFA110N15T2
MOSFET N-CH 150V 110A TO263
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- Mfr.부분 #IXFA110N15T2
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365 일 보장
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사양
| Series | HiPerFET™, TrenchT2™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8600 pF @ 25 V |
| Power Dissipation (Max) | 480W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | IXFA110 |
개요
Description
The IXFA110N15T2 is typically housed in a TO-220 package, allowing for effective heat dissipation. Its rugged design and thermal stability make it suitable for demanding applications in industrial, automotive, and renewable energy sectors.
Overall, the IXFA110N15T2 is a reliable choice for engineers seeking efficient, high-performance MOSFET solutions in power electronics.
Features
1. Voltage Rating: It typically has a maximum collector-emitter voltage (V_ce) of 1500V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous collector current (I_c) of up to 110A, allowing for robust performance in demanding environments.
3. Low Switching Losses: Its design minimizes switching losses, enhancing efficiency and reducing thermal stress during operation.
4. High Speed: The IXFA110N15T2 offers fast switching capabilities, making it ideal for applications requiring rapid on/off control.
5. Thermal Performance: It features a low thermal resistance, facilitating efficient heat dissipation and improving reliability.
6. Package Type: It typically comes in a TO-247 package, which supports better thermal management and easy mounting.
These features make the IXFA110N15T2 suitable for various applications, including inverters, motor drives, and other power conversion systems.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal where the current enters when the device is on.
The specific arrangement and additional pins may vary based on the package type (e.g., TO-220, DPAK). This device is designed for high efficiency and low on-resistance, making it suitable for applications such as power supplies, motor drives, and DC-DC converters. Always refer to the manufacturer's datasheet for detailed pinout and electrical characteristics.
Manufacturer
Application
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