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IXFH34N65X2
MOSFET N-CH 650V 34A TO247
- 제조업체
- Mfr.부분 #IXFH34N65X2
- 패키지 TO-247-3
- 데이터시트
- 재고 있음5176
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365 일 보장
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사양
| Package | Tube |
| Series | HiPerFET™, Ultra X2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 105mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 2.5mA |
| GateCharge(Qg)(Max)@Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3330 pF @ 25 V |
| PowerDissipation(Max) | 540W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247 (IXTH) |
개요
Description
The device is housed in a TO-220 package, allowing for effective heat dissipation, essential in high-power applications. The IXFH34N65X2 is suitable for both switching and linear applications, providing flexibility in design choices. Its gate threshold voltage (V_GS(th)) ensures compatibility with standard drive voltages.
Overall, the IXFH34N65X2 is an excellent choice for engineers seeking reliability and efficiency in high-voltage power circuits.
Features
- Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage circuits.
- Current Rating: It has a continuous drain current (I_D) rating of 34A, allowing it to manage significant loads.
- R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.26 ohms at a gate-source voltage (V_GS) of 10V, which helps in reducing power loss during operation.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V and 4V, enabling efficient switching.
- Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
- Fast Switching Speed: Optimized for fast switching, suitable for applications like power supplies and motor controls.
- Thermal Resistance: Low thermal resistance enhances performance in high-temperature environments.
These features make the IXFH34N65X2 a reliable choice for various power electronics applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET operation; applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current exits the device when it is in the 'on' state. It connects to the load.
3. Source (S): This terminal is where the current enters the device. It is typically connected to ground or the lower potential in the circuit.
4. Body Diode (intrinsic): While not a separate pin, the IXFH34N65X2 includes a body diode that allows current to flow from the source to the drain when the MOSFET is off, providing protection in certain applications.
This device is commonly used in power management and switching applications due to its high voltage rating and efficient performance.
Manufacturer
Application
Equivalent
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