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IXFN48N50
MOSFET N-CH 500V 48A SOT-227B
- 제조업체
- Mfr.부분 #IXFN48N50
- 패키지 SOT-227-4
- 데이터시트
- 재고 있음6213
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365 일 보장
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사양
| Package | Tube |
| Series | HiPerFET™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 48A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 4V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 8400 pF @ 25 V |
| PowerDissipation(Max) | 520W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| SupplierDevicePackage | SOT-227B |
개요
Description
The IXFN48N50 offers low on-resistance, which minimizes power loss during operation, and has fast switching capabilities, making it suitable for high-frequency applications. Additionally, it exhibits excellent reliability and robustness, making it a preferred choice for industrial and consumer electronics.
Key specifications include a maximum gate-source voltage of ±20 volts and a maximum junction temperature of 150°C. The IXFN48N50 is packaged in a TO-247 format, facilitating easy integration into electronic designs. Overall, this MOSFET is ideal for engineers seeking reliable and efficient components for power electronics systems.
Features
1. Voltage Rating: The device can handle a drain-source voltage (V_DS) of up to 500V.
2. Current Rating: It supports continuous drain current (I_D) of up to 48A, making it suitable for high-load applications.
3. On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.1Ω, enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling operation with standard logic levels.
5. Package Type: Typically available in TO-220 and other package formats, facilitating ease of heat dissipation and integration into circuits.
6. Fast Switching: Designed for quick switching applications, it minimizes switching losses, contributing to overall system efficiency.
These features make the IXFN48N50 suitable for power supplies, motor drives, and other high-voltage applications in industrial and consumer electronics.
Package
Pinout
1. Gate (G): The control terminal that turns the MOSFET on or off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which the current flows into the MOSFET when it is turned on.
4. Tab (or heat sink): Often connected to the source, it is used for heat dissipation.
This MOSFET is designed for applications requiring high voltage and current handling, making it suitable for power supply circuits, motor control, and other high-performance applications. Its specifications include a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of approximately 48A.
Manufacturer
Application
Equivalent
1. IRF840 - 500V, 8A
2. STP48NM50 - 500V, 48A
3. MTP50N50 - 500V, 50A
4. FQP50N50 - 500V, 50A
Check specifications for exact ratings and suitability for your application.
배송
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