IXFP26N50P3

The IXFP26N50P3 is a high-voltage, N-channel MOSFET designed for power applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 26A at a specified temperature. This component is known for its low on-resistance (R_DS(on)), which minimizes power losses during operation. It is commonly used in switch-mode power supplies, motor drives, and other high-efficiency power circuit applications.
The IXFP26N50P3 features a robust thermal performance, allowing it to handle high power levels effectively. Its fast switching capabilities make it suitable for high-frequency applications. The device typically comes in a TO-220 package, facilitating easy heat dissipation and mounting in various electronic designs.
Overall, the IXFP26N50P3 is a reliable choice for engineers seeking efficient and durable MOSFET solutions in demanding power electronic applications.

The IXFP26N50P3 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (Id) of 26A, allowing it to manage significant power loads.
3. RDS(on): It offers a low on-resistance (RDS(on)) of approximately 0.65 ohms, which reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, ensuring compatibility with various drive circuits.
5. Fast Switching: The IXFP26N50P3 features fast switching capabilities, making it ideal for applications such as switch-mode power supplies (SMPS) and motor drives.
6. Package Type: It is available in TO-220 package, facilitating effective heat dissipation and ease of mounting.
These features make the IXFP26N50P3 suitable for diverse power management applications in industrial and consumer electronics.

The IXFP26N50P3 is packaged in a TO-247 format. This package type is designed for high-power applications, offering excellent thermal performance and ease of mounting on heatsinks.

The IXFP26N50P3 is an N-channel MOSFET from IXYS with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D) - This is the output pin where the load is connected. The current flows out of this pin when the MOSFET is turned on.

3. Source (S) - This pin is connected to the circuit's ground or negative side. Current enters through this pin when the MOSFET is in the on state.
The IXFP26N50P3 is rated for a maximum drain-source voltage of 500V and a continuous drain current of up to 26A, making it suitable for high-voltage applications.

The IXFP26N50P3 is manufactured by IXYS Corporation, which is now part of the Littelfuse family of companies. IXYS specializes in the design and manufacture of semiconductor devices, including power semiconductors, RF power devices, and integrated circuits. The company serves a variety of industries, including automotive, telecommunications, renewable energy, and industrial applications. IXYS is known for its innovation in high-power and high-voltage semiconductor solutions, contributing to advancements in energy efficiency and power management technologies.

The IXFP26N50P3 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its main areas of application include switch-mode power supplies (SMPS), motor control, industrial power converters, and automotive systems. It is suitable for high-efficiency power management due to its low on-resistance and fast switching capabilities, making it ideal for energy-efficient designs in various electronic devices.

The IXFP26N50P3 is a 500V, 26A N-channel MOSFET. Equivalent products include:
1. IRF260: 260V, 30A
2. STP26NM50: 500V, 26A
3. MTP26N50: 500V, 26A
4. FQP26N50: 500V, 26A
Always check the datasheets for specific electrical characteristics and applications to ensure compatibility.