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IXFP4N85X
MOSFET N-CH 850V 3.5A TO220AB
- 제조업체
- Mfr.부분 #IXFP4N85X
- 패키지
- 데이터시트
- 재고 있음2470
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365 일 보장
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사양
| Series | HiPerFET™, Ultra X |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 850 V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 247 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB (IXFP) |
| Package / Case | TO-220-3 |
| Base Product Number | IXFP4N85 |
개요
Description
This MOSFET is utilized in various applications, including power conversion, motor control, and other high-efficiency electrical systems. It features a low on-state resistance, which minimizes power losses during operation, enhancing overall system efficiency. Additionally, its robust construction allows for reliable operation under demanding conditions, making it an optimal choice for both commercial and industrial settings.
The IXFP4N85X is valued for its fast switching capabilities, contributing to reduced energy consumption and improved performance in electronic circuits. With its combination of high voltage handling and efficient operation, it is a versatile component in the design of modern electronic power systems.
Features
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_ds) of 850V and typically supports a continuous drain current (I_d) of around 4A, making it suitable for high-voltage applications.
2. R_ds(on): The device has a low on-resistance, which helps minimize power loss during operation, thereby increasing efficiency.
3. Fast Switching: It offers fast switching speeds, which are essential for high-frequency applications, reducing switching losses.
4. Thermal Performance: The MOSFET is designed to efficiently dissipate heat, often featuring a thermal resistance junction-to-case (R_θJC) that ensures reliable operation under varying temperature conditions.
5. Package Type: It is commonly available in TO-220 or TO-263 packages, providing ease of mounting and compatibility with heat sinks for enhanced thermal management.
6. Applications: This MOSFET is often used in power supply systems, motor drives, lighting, and other industrial applications requiring high efficiency and reliability.
These features make the IXFP4N85X ideal for applications where high voltage, efficiency, and fast switching are crucial.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the circuit into the MOSFET when it is turned on.
3. Source (S): This is the terminal through which the current exits the MOSFET and returns to the circuit.
The IXFP4N85X is designed for high-voltage applications, typically offering a drain-source voltage (Vds) rating of 850V and a continuous drain current (Id) of around 4A. It is used in various power electronics applications, including power supplies, converters, and motor control, due to its capability to handle high voltage and current levels efficiently.
Manufacturer
Application
Equivalent
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