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IXFP80N25X3
MOSFET N-CH 250V 80A TO220AB
- 제조업체
- Mfr.부분 #IXFP80N25X3
- 패키지
- 데이터시트 IXFP80N25X3 DataSheet
- 재고 있음2937
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사양
| Series | HiPerFET™, Ultra X3 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5430 pF @ 25 V |
| Power Dissipation (Max) | 390W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IXFP80 |
개요
Description
This MOSFET is designed with low on-resistance (Rds(on)), which minimizes power loss and improves efficiency in switching applications. Its fast switching capabilities enable it to handle high frequency operations effectively. The IXFP80N25X3 also incorporates a robust package that ensures thermal performance, critical for maintaining reliability under high load conditions.
The device's characteristics, including gate threshold voltage and thermal stability, allow for easy integration into various circuits while providing excellent performance in demanding environments. Overall, it is a versatile component for engineers looking to enhance the efficiency and reliability of their power electronic designs.
Features
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 250V, suitable for various high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (Id) up to 80A, ensuring robust performance in demanding environments.
3. Low RDS(on): Offers low on-resistance (RDS(on)), typically around 0.085 ohms, which reduces conduction losses and improves efficiency.
4. Fast Switching: Designed for rapid switching capabilities, enhancing performance in switching applications such as power supplies and converters.
5. Thermal Performance: Features a high maximum junction temperature (Tj) of 150°C and good thermal resistance, allowing for operation in challenging thermal conditions.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy mounting and heat dissipation.
These characteristics make the IXFP80N25X3 ideal for applications in power management, motor drives, and industrial equipment.
Package
Pinout
1. Gate (G): The control terminal that regulates the flow of current between the drain and source.
2. Drain (D): The terminal through which the current flows out of the MOSFET.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Body Diode (internal): Provides a path for reverse current, utilized in applications requiring inductive load handling.
5. Tab/Heatsink (optional): Often connected to the source for thermal management.
This MOSFET is designed for high-efficiency power applications, featuring a maximum drain-source voltage (V_DS) of 250V and a continuous drain current (I_D) of 80A. It is suitable for use in power supplies, motor controls, and other applications requiring efficient switching.
Manufacturer
Application
Equivalent
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