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IXGA30N120B3

Name: IXGA30N120B3
Rating: 4.7 (12 reviews)

IGBT PT 1200V 60A TO-263AA

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Mfr.부분 #IXGA30N120B3
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사양

Series	GenX3™
Part Status	Active
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	60 A
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 30A
Power - Max	300 W
Switching Energy	3.47mJ (on), 2.16mJ (off)
Input Type	Standard
Gate Charge	87 nC
Td (on/off) @ 25°C	16ns/127ns
Test Condition	960V, 30A, 5Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AA
Base Product Number	IXGA30
Current - Collector Pulsed (Icm)	150 A

개요

Description

The IXGA30N120B3 is a high-voltage, 30A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power electronics applications. It is part of IXYS's family of IGBTs and MOSFETs, optimized for high efficiency and fast switching capabilities. Operating at a maximum voltage of 1200V, this device is suitable for applications such as power supplies, motor drives, and renewable energy systems, including solar inverters.
Key features of the IXGA30N120B3 include low on-resistance, which enhances efficiency during operation, and high-speed switching, which minimizes losses. The device is packaged in a TO-220 format, facilitating effective heat dissipation and easy mounting in various setups. Additionally, it has a robust gate drive interface, ensuring compatibility with standard driving circuits.
This MOSFET is valued for its reliability and performance in demanding environments, making it a popular choice among engineers and designers in the power electronics sector.

Features

The IXGA30N120B3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for various power electronics applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: 30A, providing robust performance in power circuits.
3. Low On-State Voltage Drop: Ensures efficient operation with lower power losses.
4. Fast Switching Speed: Enables higher frequency operation, improving overall system efficiency.
5. Thermal Stability: Designed to operate effectively under high thermal conditions, enhancing reliability.
6. Soft Recovery Characteristics: Reduces voltage overshoot and EMI, promoting smoother operation in switching applications.
7. TO-247 Package: Offers good thermal management, facilitating better heat dissipation.
These features make the IXGA30N120B3 suitable for applications such as inverters, motor drives, and power supplies in industrial and renewable energy sectors.

Package

The IXGA30N120B3 is packaged in a TO-247 form factor. This type of package is designed for high-power applications and offers efficient thermal management and robust performance in various electronic devices.

Pinout

The IXGA30N120B3 is a 1200V, 30A IGBT (Insulated Gate Bipolar Transistor) from IXYS. It features a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the IGBT and triggers it to turn on or off.
2. Collector (C): Connected to the load; current flows from this pin when the IGBT is on.
3. Emitter (E): The terminal through which current exits the device, returning to ground or the negative side of the circuit.
The pin arrangement is typically specified in the datasheet, with the pins arranged to facilitate easy integration into circuits. The device is designed for applications requiring high voltage and high switching speeds, such as in power electronics, motor drives, and renewable energy systems.

Manufacturer

The IXGA30N120B3 is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS specializes in the design and manufacture of power semiconductor devices and integrated circuits, primarily focusing on high-performance components for applications in power management, renewable energy, and industrial automation. The company is known for its expertise in creating efficient, reliable, and high-voltage solutions, catering to various sectors including automotive, telecommunications, and consumer electronics.

Application

The IXGA30N120B3 is a 1200V, 30A IGBT, primarily used in high-power applications such as industrial motor drives, renewable energy systems (like solar inverters), and electric vehicles. It is suitable for applications requiring efficient switching and high frequency, including power supplies and UPS systems. Its ability to handle high voltages and currents makes it ideal for converters and inverters in various energy conversion systems.

Equivalent

The IXGA30N120B3 is an IGBT (Insulated Gate Bipolar Transistor) with a rated voltage of 1200V and a current capacity of 30A. Equivalent products include:
1. Infineon IGBT modules such as the FSIG30R12KT3.
2. Mitsubishi M5E30A120.
3. ON Semiconductor MBRF30H120.
4. Fairchild FGA30N120.
Always check specifications for compatibility in your specific application.