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IXTH52N65X
MOSFET N-CH 650V 52A TO247
- 제조업체
- Mfr.부분 #IXTH52N65X
- 패키지 TO-247-3
- 데이터시트
- 재고 있음4599
100% 원래 &새로운
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365 일 보장
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사양
| Package | Tube |
| Series | Ultra X |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 52A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 68mOhm @ 26A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 113 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 4350 pF @ 25 V |
| PowerDissipation(Max) | 660W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247 (IXTH) |
개요
Description
This MOSFET is characterized by its low on-resistance (R_DS(on)), which minimizes power loss and enhances efficiency in circuits. It also offers fast switching speeds, contributing to improved performance in high-frequency applications. Additionally, the IXTH52N65X is designed with a robust package to handle thermal stress, providing reliable operation in demanding environments.
Overall, the IXTH52N65X serves as an effective component in various configurations, supporting both high-voltage and high-current designs, while ensuring optimal thermal management and energy efficiency.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 52A, with appropriate heat sinking.
3. Low On-Resistance: Offers a low R_DS(on) of approximately 0.38 ohms, ensuring efficient power conversion and reduced heat generation during operation.
4. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in power supplies and converters.
5. Thermal Performance: Features a TO-247 package that aids in effective heat dissipation, allowing operation at higher temperatures.
6. Gate Threshold Voltage: Has a gate threshold voltage (V_GS(th)) typically around 3-4V, enabling easy drive with low-voltage controllers.
Overall, the IXTH52N65X is ideal for use in applications like motor drives, power inverters, and other high-efficiency power management systems.
Package
Pinout
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching on and off by applying a voltage.
2. Drain (D): The output terminal where the load is connected, allowing current to flow from this pin when the device is turned on.
3. Source (S): Common reference point for the voltage applied to the gate, typically connected to ground in low-side switching applications.
The IXTH52N65X is rated for a maximum drain-source voltage of 650V and a continuous drain current of 52A, making it suitable for use in power supplies, motor drives, and other high-power applications.
Manufacturer
Application
Equivalent
1. STP52N65M2
2. IRF520
3. FQP52N65
4. BUK765R6-40
Always verify specifications such as VDS, ID, RDS(on), and package type for compatibility in your application.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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