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IXTK110N20L2
MOSFET N-CH 200V 110A TO264
- 제조업체
- Mfr.부분 #IXTK110N20L2
- 패키지 TO-264-3
- 데이터시트
- 재고 있음4118
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tube |
| Series | Linear L2™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 24mOhm @ 55A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 3mA |
| GateCharge(Qg)(Max)@Vgs | 500 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 23000 pF @ 25 V |
| PowerDissipation(Max) | 960W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-264 (IXTK) |
개요
Description
The IXTK110N20L2 is often used in switching power supplies, motor drives, and other applications requiring efficient power management. Its robust construction and thermal performance allow for operation in demanding environments. The MOSFET is housed in a TO-220 package, facilitating effective heat dissipation and easy mounting on heatsinks.
Key specifications include a total gate charge (Q_g) that influences switching speed and efficiency, making it ideal for fast switching applications. Overall, the IXTK110N20L2 is a reliable choice for engineers designing high-efficiency power conversion systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 110A, making it ideal for high-current applications.
3. R_DS(on): It offers a low on-resistance of approximately 0.11Ω, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, facilitating easy drive requirements.
5. Fast Switching: The MOSFET is designed for fast switching, enabling efficient performance in pulse-width modulation (PWM) applications.
6. Thermal Performance: It has a robust thermal package, providing good thermal conductivity and heat dissipation.
7. Package Type: Typically available in TO-220 or similar packages for easy integration into circuits.
These features make the IXTK110N20L2 suitable for applications such as power supplies, motor drivers, and inverters.
Package
Pinout
1. Gate (G): Controls the MOSFET operation; applying voltage here turns the device on.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which the current enters; usually connected to ground in common-source configurations.
4. Tab: Often connected to the Source; also serves as a heat sink for thermal management.
The IXTK110N20L2 is designed for high-efficiency switching applications, offering low on-resistance and high current handling capabilities. Its specifications make it suitable for power management in various electronic circuits.
Manufacturer
Application
Equivalent
배송
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