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IXTP76P10T
MOSFET P-CH 100V 76A TO220AB
- 제조업체
- Mfr.부분 #IXTP76P10T
- 패키지 TO-220-3
- 데이터시트
- 재고 있음5760
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tube |
| Series | TrenchP™ |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 76A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 25mOhm @ 38A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 197 nC @ 10 V |
| Vgs(Max) | ±15V |
| InputCapacitance(Ciss)(Max)@Vds | 13700 pF @ 25 V |
| PowerDissipation(Max) | 298W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
개요
Description
Key specifications include a gate threshold voltage (V_GS(th)) ranging from 2 to 4V, allowing for easier gate drive requirements, and a fast switching capability, making it suitable for use in DC-DC converters, power supplies, and motor drives. Its compact TO-220 package facilitates efficient thermal management.
Additionally, the IXTP76P10T is designed to meet high reliability standards, ensuring robust performance in demanding environments. Overall, it is an excellent choice for engineers looking to enhance performance and efficiency in their electronic designs.
Features
1. Voltage Rating: It typically supports a drain-source voltage (VDS) of up to 100V, making it suitable for a variety of high-voltage applications.
2. Current Rating: With a continuous drain current (ID) of 76A, it can handle significant loads efficiently.
3. RDS(on): It features a low on-resistance (RDS(on)) which minimizes conduction losses, enhancing efficiency during operation.
4. Fast Switching: The device is optimized for fast switching speeds, making it ideal for applications like DC-DC converters, motor drives, and power supplies.
5. Thermal Performance: Its construction allows for effective heat dissipation, which is crucial for maintaining performance under high-load conditions.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy heat sinking and integration into various circuit designs.
Overall, the IXTP76P10T is well-suited for applications requiring robust and efficient power handling.
Package
Pinout
The pin configuration typically includes:
1. Gate (G): Controls the MOSFET’s operation.
2. Drain (D): The terminal through which the current exits the MOSFET.
3. Source (S): The terminal through which current enters the MOSFET.
4. Body (B): Normally internally connected to the source.
The IXTP76P10T features low on-resistance and high-speed switching capabilities, making it efficient for power electronic applications. For detailed specifications, including maximum ratings, please refer to the manufacturer's datasheet.
Manufacturer
Application
Equivalent
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