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JS28F512M29EWLA

Name: JS28F512M29EWLA
Rating: 4.7 (12 reviews)

IC FLASH 512MBIT PARALLEL 56TSOP

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Mfr.부분 #JS28F512M29EWLA
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재고 있음3519

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100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Part Status	Obsolete
DigiKey Programmable	Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	512Mbit
Memory Organization	64M x 8, 32M x 16
Memory Interface	Parallel
Write Cycle Time - Word, Page	110ns
Access Time	110 ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	56-TSOP
Base Product Number	JS28F512M29

개요

Description

The JS28F512M29EWLA is a flash memory chip produced by Micron Technology, specifically designed for high-performance applications requiring reliable non-volatile storage. This component features a 512 Mb (megabit) capacity, making it suitable for use in devices such as smartphones, tablets, and embedded systems.
Key characteristics include:
1. Interface: It typically utilizes a NAND flash interface, which allows for fast data transfer and efficient management of memory operations.
2. Speed: Offers high read and write speeds, which is crucial for running applications and storing data efficiently.
3. Endurance and Reliability: Designed to withstand numerous programming and erase cycles, ensuring data integrity over time.
4. Power Efficiency: Consumes low power during operation, which is essential for battery-operated devices.
Overall, the JS28F512M29EWLA is ideal for applications requiring high-density storage, speed, and durability, making it a popular choice in modern electronics.

Features

The JS28F512M29EWLA is a 512 Mb (64 MB) NOR Flash memory device designed for a variety of applications, including mobile devices, automotive, and consumer electronics. Key features include:
- Density: 512 Mb (64 MB) storage capacity.
- Architecture: Supports asynchronous interface for easy integration.
- Access Times: Offers fast random access times, enhancing system performance.
- Operating Voltage: Typically operates at 2.7V to 3.6V, making it suitable for low-voltage applications.
- Write/Erase Cycles: Endurance of up to 100,000 write/erase cycles, ensuring longevity.
- Data Retention: Retains data for 20 years at +85°C.
- Packaging: Available in various package options, including TSOP and BGA, for flexible design choices.
- Security Features: May include features like secure firmware update and read protection for enhanced security.
This device is suitable for applications requiring fast data access and reliable storage solutions.

Package

The JS28F512M29EWLA is packaged in a 48-ball BGA (Ball Grid Array) format. This type of packaging allows for a compact design and efficient thermal management, suitable for high-density applications.

Pinout

The JS28F512M29EWLA is a NAND flash memory chip with a pin count of 48 pins. Its primary function is to provide high-density, non-volatile storage for a variety of applications, such as mobile devices, consumer electronics, and embedded systems. The chip supports a parallel interface, allowing for fast data transfer and efficient memory operations. Key functions include read, write, and erase capabilities, which enable it to store and manage data effectively. It is designed for reliability and endurance, making it suitable for applications requiring robust data retention and performance.

Manufacturer

The manufacturer of the JS28F512M29EWLA is Macronix International Co., Ltd. Macronix is a semiconductor company based in Taiwan that specializes in non-volatile memory products, including NAND flash and NOR flash memory. Founded in 1989, the company focuses on providing memory solutions for various applications, including consumer electronics, automotive, and industrial sectors. Macronix is known for its commitment to research and development, aiming to deliver innovative memory technologies to meet the evolving needs of its customers.

Application

The JS28F512M29EWLA is a 512Mb NOR flash memory device primarily used in applications such as embedded systems, automotive electronics, consumer electronics, and industrial control systems. It serves as non-volatile storage for firmware, configuration data, and application code in devices like smartphones, tablets, IoT devices, and networking equipment. Its fast read and write speeds make it suitable for real-time data processing and boot-up tasks.

Equivalent

The JS28F512M29EWLA chip is a 512Mb NAND Flash memory device. Equivalent products include the Micron MT29F512G, Samsung K9GAG08U0M, and Hynix H27UCG8T2BTR. Always verify compatibility with your specific application requirements, such as pin configuration and voltage levels.