K4A4G165WF-BIWE

이미지는 참조용만

K4A4G165WF-BIWE

  • 제조업체
  • Mfr.부분 #K4A4G165WF-BIWE
  • 패키지
  • 데이터시트
  • 재고 있음8106

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Manufacturer Samsung
Package FBGA-96

개요

Description

The K4A4G165WF-BIWE is a model of DRAM (Dynamic Random-Access Memory) chip developed by Samsung. It is part of Samsung's high-performance LPDDR4 (Low Power Double Data Rate 4) memory solutions, designed primarily for mobile and embedded applications. This chip is known for its efficient power consumption, making it ideal for smartphones, tablets, and other portable devices that require a balance between performance and energy efficiency. The K4A4G165WF-BIWE features a 4Gb (gigabit) capacity and operates at high speeds, which enhances multitasking capabilities and the overall speed of the device in which it is integrated. It supports a wide range of frequencies and settings, allowing for versatile use across various platforms. The "BIWE" in its naming convention indicates specific characteristics related to its design, such as its package type and temperature range. Overall, the K4A4G165WF-BIWE is a critical component in delivering high-speed, low-power memory capabilities to modern electronic devices.

Features

The K4A4G165WF-BIWE is a memory chip produced by Samsung. It belongs to the DDR4 SDRAM category, which stands for Double Data Rate 4 Synchronous Dynamic Random-Access Memory. Key features include:
1. Capacity: 4Gb (Gigabits) density, which is equivalent to 512MB.
2. Organization: Organized in a 256M x 16-bit configuration.
3. Speed: High-speed data transfer rates, supporting up to 2400 Mbps (megabits per second) per pin.
4. Voltage: Operates at a low voltage of 1.2V, enhancing power efficiency.
5. Temperature Range: Industrial-grade temperature range, suitable for various applications, including automotive and embedded systems.
6. Package: Available in a compact Fine Ball Grid Array (FBGA) package, optimizing space utilization.
7. Reliability: Built with on-die error correction code (ECC) for improved data integrity and reliability.
8. Compatibility: Designed to be backward compatible with lower-speed DDR4 modules.
This chip is widely used in high-performance computing and consumer electronics due to its efficient power consumption and fast data processing capabilities.

Package

The K4A4G165WF-BIWE is a memory chip typically packaged in a FBGA (Fine-Pitch Ball Grid Array) format. This package type is known for its compact size and efficient electrical performance, making it suitable for high-density applications in electronics.

Pinout

The K4A4G165WF-BIWE is a 4Gb (Gigabit) DDR4 SDRAM chip from Samsung. It features a 178-ball Fine Ball Grid Array (FBGA) package. The device is designed for high-performance applications, providing efficient and reliable memory support in computing systems. Its primary functions include storing and retrieving data quickly to support the processing needs of the system, often used in environments that require high-speed data access such as PCs, servers, and other performance-critical applications. The chip supports a range of features typical of DDR4 memory, including higher bandwidth, increased energy efficiency, and improved data transfer rates compared to its predecessors.

Manufacturer

The K4A4G165WF-BIWE is a DRAM (Dynamic Random Access Memory) component manufactured by Samsung Electronics. Samsung Electronics is a South Korean multinational corporation and one of the world's leading technology companies. It operates across various sectors including consumer electronics, information technology, and semiconductor manufacturing. Samsung is particularly well-known for producing a wide range of products such as smartphones, televisions, home appliances, and memory components like DRAM and NAND flash. The company is a significant player in the global market for electronic components and plays a crucial role in the supply chain for various high-tech industries.

Application

The K4A4G165WF-BIWE is a DRAM chip typically used in high-performance computing applications. It is suited for use in smartphones, tablets, and other mobile devices due to its low power consumption and high efficiency. Additionally, it's applicable in embedded systems, IoT devices, and consumer electronics where compact and efficient memory solutions are required. Its advanced features and reliable performance make it ideal for enhancing the speed and responsiveness of these devices.

Equivalent

The K4A4G165WF-BIWE is a 4Gb LPDDR4 DRAM chip manufactured by Samsung. Equivalent products include Micron's MT53B512M32D2NP, SK Hynix's H9HKNNN8KUMLHR, and Kingston's D5128E6BFBGJD. These are similar in terms of capacity, technology, and performance, designed for mobile and embedded applications. Always verify specifications and compatibility, as features might vary slightly between manufacturers.

배송

배송 방법We

DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.


배송 요금 참조 (DHL/FedEx):

DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.

FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.

등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.

지불

Payment Methods

지불 기간은 100% 사전 지불입니다.

현재, 우리는 아래 지불 방법만 받아들입니다.:

1. PayPal

2. 신용/직불 카드

3. 전선 전송