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K4ABG165WA-MCWE

Name: K4ABG165WA-MCWE
Rating: 4.7 (12 reviews)

16Gbit 1.2V 1.6GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS

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Mfr.부분 #K4ABG165WA-MCWE
패키지
데이터시트 K4ABG165WA-MCWE DataSheet
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사양

Packaging	FBGA-96
Clock Frequency	1.6GHz
Memory Format	DDR4 SDRAM
Memory Size	16Gbit
Operating temperature	0℃~+85℃
Voltage - Supply	1.2V

개요

Description

K4ABG165WA-MCWE is a type of DRAM (Dynamic Random Access Memory) memory chip produced by Samsung. This component is commonly used in various electronic devices, including smartphones, tablets, and other applications requiring high-speed memory. It typically features a capacity of 1 gigabit (Gb) and operates on a low voltage to enhance power efficiency. This chip is part of the DDR (Double Data Rate) family, which allows for faster data transfer rates compared to earlier memory technologies.
The "MCWE" designation indicates specific manufacturing and operational features, such as speed grades and packaging types. Due to its performance and efficiency, the K4ABG165WA-MCWE is a popular choice for OEMs (Original Equipment Manufacturers) looking to optimize the performance of their devices while managing power consumption.

Features

The K4ABG165WA-MCWE is a DRAM memory chip from Samsung, typically used in various electronic devices. It features:
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory).
2. Capacity: 2 GB (Gigabytes).
3. Organization: 1M x 16 bits x 8 banks, allowing for efficient data handling.
4. Speed: Operates at a clock speed of 800 MT/s (Megatransfers per second) with a data rate of 1600 Mbps.
5. Voltage: Designed to operate at a low voltage of 1.5V, which improves power efficiency.
6. Package: Generally available in a standard TSOP (Thin Small-Outline Package) form factor, facilitating easy integration into devices.
This memory chip is commonly utilized in laptops, desktop computers, and other consumer electronics, providing reliable performance and energy efficiency.

Package

The K4ABG165WA-MCWE is a DRAM memory chip typically packaged in a 60-ball BGA (Ball Grid Array) format. This package type is designed for compact integration on circuit boards, providing efficient thermal and electrical performance.

Pinout

The K4ABG165WA-MCWE is a 16 Megabit (2 Megabyte) DRAM chip from Samsung, specifically a DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory). It typically comes in a 48-pin TSOP-II (Thin Small Outline Package) configuration.
The pin functions include power supply pins (VDD, VSS), control pins (CS, RAS, CAS, WE), address pins (A0-A11), data pins (DQ0-DQ15), and other specific pins for functions like clock (CLK) and data strobe (DQS). The device operates with a 2.5V power supply and is designed to facilitate memory access in computer systems, supporting burst modes and various clock speeds to enhance performance.
For the exact pinout and detailed functionality, refer to the manufacturer's datasheet for the K4ABG165WA-MCWE.

Manufacturer

The K4ABG165WA-MCWE is manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate, widely recognized as one of the world's largest technology companies. It operates in various sectors, including consumer electronics, semiconductors, telecommunications, and more. Samsung is particularly known for its innovative products in smartphones, displays, and memory chips. The K4ABG165WA-MCWE is a type of DRAM (Dynamic Random Access Memory) chip, reflecting Samsung's significant role in the semiconductor industry.

Application

The K4ABG165WA-MCWE is a DRAM memory chip primarily used in mobile devices, such as smartphones and tablets, for applications requiring high-speed data processing and efficient power consumption. It is also suitable for automotive systems, industrial control devices, and other embedded systems where reliable memory performance is essential.

Equivalent

The K4ABG165WA-MCWE is a DRAM chip from Samsung. Equivalent products from other manufacturers include:
- Micron: MT46V32M16
- Hynix: H5TQ1G83AFR
- Nanya: NT5CB256M16
Always verify specifications and compatibility before substituting components.