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K4B2G0846F-BYMA

Name: K4B2G0846F-BYMA
Rating: 4.7 (12 reviews)

1.35V 2Gbit 256Mx8 DDR3 FBGA-78 Memory (ICs) RoHS

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Mfr.부분 #K4B2G0846F-BYMA
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사양

Packaging	FBGA-78
Interface	DDR3
Memory Format	256Mx8
Memory Size	2Gbit
Operating temperature	0℃~+85℃
Voltage - Supply	1.35V

개요

Description

K4B2G0846F-BYMA is a type of NAND flash memory chip developed by Samsung. It features a 8Gb (gigabit) capacity and is commonly used in various consumer electronics, including smartphones, tablets, and other devices requiring high-speed data storage. This memory chip employs advanced 3D NAND technology, allowing for increased storage density and improved performance compared to traditional 2D NAND. It supports a range of data transfer interfaces, enabling efficient integration into devices. The chip's architecture enhances durability and reliability, making it suitable for both consumer and industrial applications. Overall, K4B2G0846F-BYMA is designed to meet the growing demand for high-performance memory solutions in modern electronic devices.

Features

The K4B2G0846F-BYMA is a 4GB (256M x 16) DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip. Key features include:
1. Density: 4GB capacity, suitable for a variety of applications including laptops, desktops, and servers.
2. Organization: 256M x 16 bits, which allows for efficient data transfer and management.
3. Speed: Supports data rates of up to 1600 MT/s (Mega Transfers per second), enhancing overall performance.
4. Voltage: Operates at a low voltage of 1.5V, which helps in reducing power consumption.
5. Package: Comes in a small FBGA (Fine Ball Grid Array) package, making it suitable for compact designs.
6. Compatibility: Designed to be compatible with DDR3 standards, ensuring broad usability across various platforms.
7. Features: Includes features like burst mode and deep power-down mode for improved performance and energy efficiency.
This memory chip is ideal for enhancing system performance in high-demand environments.

Package

The K4B2G0846F-BYMA is a DRAM chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type is designed for high-density memory applications, providing efficient thermal performance and electrical connectivity.

Pinout

The K4B2G0846F-BYMA is a 2Gb (256MB) DDR3 SDRAM memory chip. It features a 78-ball FBGA (Fine Ball Grid Array) package. The pin count is 78, and each pin has specific functions related to power, ground, data input/output, and control signals.
Key functions include:
- Data I/O Pins: For data transfer (DQ pins).
- Address Pins: To select memory locations (A pins).
- Chip Select: To enable or disable the chip (CS).
- Clock Pins: For synchronization (CLK, CLK#).
- Command Pins: For various operations like read/write (RAS, CAS, WE).
- Power and Ground Pins: For supplying power (VDD, VSS).
This chip supports various operating modes and is commonly used in applications requiring moderate memory capacity, such as consumer electronics and computing devices.

Manufacturer

The K4B2G0846F-BYMA is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is primarily known for its electronics division, which produces a wide range of products, including semiconductors, consumer electronics, and telecommunications equipment. The K4B2G0846F-BYMA is a type of DRAM (Dynamic Random Access Memory) chip used in various electronic devices, showcasing Samsung's expertise in memory technology. The company is one of the largest manufacturers of memory chips in the world and plays a crucial role in the global semiconductor industry.

Application

The K4B2G0846F-BYMA is a 2Gb DDR3 SDRAM memory chip commonly used in applications such as smartphones, tablets, laptops, and other consumer electronics. It is suitable for high-performance computing tasks, graphics processing, and data-intensive applications, providing efficient memory solutions for both mobile and embedded systems.

Equivalent

The K4B2G0846F-BYMA is a 2Gb DDR3 SDRAM memory chip. Equivalent products typically include other 2Gb DDR3 SDRAM chips from manufacturers like Micron, Hynix, and Samsung with similar specifications (e.g., DDR3-1600, 1.5V). Specific equivalents might include K4B2G0846D (Samsung) or similar models from different manufacturers. Always check the datasheet for compatibility in terms of speed, voltage, and timing parameters.