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K4B2G1646C-HCH9

Name: K4B2G1646C-HCH9
Rating: 4.7 (12 reviews)

제조업체
Mfr.부분 #K4B2G1646C-HCH9
패키지
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재고 있음11199

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사양

Manufacturer	JLCPCB Assembly
Package	BGA-96_L13.5-W7.5-P0.80

개요

Description

K4B2G1646C-HCH9 is a specific NAND flash memory chip manufactured by Samsung. It is part of the K4B series, which is known for high-density storage solutions used in various electronic devices, including smartphones, tablets, and other portable gadgets. This particular model features a 16Gb (gigabit) capacity, making it suitable for applications requiring efficient data storage and retrieval.
The chip utilizes advanced NAND technology to offer improved performance, endurance, and reliability. It supports multiple data transfer modes, enabling faster read/write speeds, which enhances overall device performance. The K4B2G1646C-HCH9 also adheres to industry standards, ensuring compatibility with various systems.
In summary, this flash memory chip is integral for modern electronic devices, providing essential storage capabilities for applications ranging from everyday tasks to complex data management.

Features

The K4B2G1646C-HCH9 is a 2GB DDR3 SDRAM memory chip produced by Samsung. Key features include:
1. Memory Type: DDR3 SDRAM, which offers higher bandwidth and lower power consumption compared to DDR2.
2. Capacity: 2GB, suitable for various applications requiring moderate memory resources.
3. Data Rate: Operates at a data rate of 1600 MT/s (mega-transfers per second), allowing for efficient performance in data-intensive applications.
4. Organization: It has a configuration of 256Mx8, which means 256 megabits per chip with an 8-bit wide data bus.
5. Voltage: Typically operates at a voltage of 1.5V, contributing to energy efficiency.
6. Package Type: Available in a compact package, often in a 78-ball FBGA (Fine Ball Grid Array), facilitating easy integration into electronic devices.
7. Applications: Commonly used in laptops, desktops, and embedded systems where reliable memory performance is essential.
Overall, the K4B2G1646C-HCH9 is designed for efficiency and compatibility in various computing environments.

Package

The K4B2G1646C-HCH9 is a mobile DRAM chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.

Pinout

The K4B2G1646C-HCH9 is a 2Gb (gigabit) DDR3 SDRAM (Synchronous Dynamic RAM) memory chip produced by Samsung. It features a 64-bit data bus and has a total pin count of 78 pins.
In terms of its functionality, this memory chip is designed to operate at a maximum clock speed of 1600 MT/s (megatransfers per second) and typically runs on a voltage of 1.5V. It is primarily used in various applications that require high-density memory, such as in computers, laptops, and other electronic devices.
The K4B2G1646C-HCH9 is known for its low power consumption, making it suitable for mobile and energy-efficient applications.

Manufacturer

The manufacturer of the K4B2G1646C-HCH9 is Samsung Electronics. Samsung is a South Korean multinational conglomerate that specializes in various sectors, including consumer electronics, semiconductors, telecommunications, and information technology.
As one of the world's largest manufacturers of memory chips, Samsung plays a crucial role in the semiconductor industry, producing products such as DRAM, NAND flash, and system LSI. The K4B2G1646C-HCH9 is a 2GB DDR3 DRAM memory chip, highlighting Samsung's focus on high-performance memory solutions for computers, mobile devices, and other electronic applications. The company is also known for its innovation and extensive R&D efforts, reinforcing its position as a leader in technology and electronics globally.

Application

The K4B2G1646C-HCH9 is a 2GB DDR3 DRAM memory chip commonly used in mobile devices, tablets, and laptops. Its application areas include consumer electronics, portable computing, and embedded systems, providing efficient memory performance for tasks such as multitasking, gaming, and multimedia processing.

Equivalent

The K4B2G1646C-HCH9 is a 2GB DDR3 SDRAM memory chip. Equivalent products include:
1. MT8JTF51264HZ (Micron)
2. H5TQ2G83CFR (Hynix)
3. ISM2G50B3 (Integrated Silicon Solution)
4. MTA2G1R64AZ3 (Micron)
Ensure compatibility with your specific application, as timing and voltage specifications may vary.