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K4B4G0846E-BMMA
- 제조업체
- Mfr.부분 #K4B4G0846E-BMMA
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100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Manufacturer | Samsung |
| Package | FBGA-78 |
개요
Description
K4B4G0846E-BMMA is a type of NAND flash memory chip manufactured by Samsung. It is utilized primarily in smartphones, tablets, and various consumer electronics, offering high storage capacity and performance. The chip is designed for efficient data transfer and endurance, making it suitable for applications requiring fast read and write speeds.
Key features typically include a high-density configuration that allows for extensive data storage in a compact form factor, low power consumption for extended battery life, and robust reliability to ensure data integrity. It supports various memory management technologies, such as wear leveling and error correction, to enhance its longevity and performance.
In summary, K4B4G0846E-BMMA represents a crucial component in modern digital devices, contributing to their efficiency and functionality in handling large amounts of data.
Key features typically include a high-density configuration that allows for extensive data storage in a compact form factor, low power consumption for extended battery life, and robust reliability to ensure data integrity. It supports various memory management technologies, such as wear leveling and error correction, to enhance its longevity and performance.
In summary, K4B4G0846E-BMMA represents a crucial component in modern digital devices, contributing to their efficiency and functionality in handling large amounts of data.
Features
The K4B4G0846E-BMMA is a 4 Gb (Gigabit) DDR3 SDRAM memory chip designed for high-performance applications. It features a x4 organization and operates at a voltage of 1.5V, making it energy-efficient. The chip supports a data rate of up to 1600 MT/s (megatransfers per second), which enhances overall system performance.
Key features include:
- Density: 4 Gb capacity, suitable for various applications including mobile devices and computing systems.
- Data Rate: Supports DDR3 speeds up to 1600 MT/s.
- Interface: x4 data bus width, providing higher data throughput.
- Package Type: Typically available in a small form factor, facilitating integration into compact designs.
- Refresh Cycle: Standard self-refresh capabilities, ensuring data integrity during low-power states.
This memory chip is ideal for applications requiring high bandwidth and low power consumption, such as laptops, tablets, and other embedded systems.
Key features include:
- Density: 4 Gb capacity, suitable for various applications including mobile devices and computing systems.
- Data Rate: Supports DDR3 speeds up to 1600 MT/s.
- Interface: x4 data bus width, providing higher data throughput.
- Package Type: Typically available in a small form factor, facilitating integration into compact designs.
- Refresh Cycle: Standard self-refresh capabilities, ensuring data integrity during low-power states.
This memory chip is ideal for applications requiring high bandwidth and low power consumption, such as laptops, tablets, and other embedded systems.
Package
The K4B4G0846E-BMMA is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. It is designed for high-density memory applications, typically used in mobile devices.
Pinout
The K4B4G0846E-BMMA is a 4 Gigabit (Gb) DDR3 SDRAM memory chip manufactured by Samsung. It features a pin count of 78 pins in a TSOP II (Thin Small Outline Package) configuration.
The primary functions of the K4B4G0846E-BMMA include data storage and data transfer in various electronic devices, particularly in applications requiring high-speed memory such as computers, mobile devices, and industrial equipment. It operates on a 1.5V supply voltage and supports a wide range of memory operations, including read, write, and refresh cycles, adhering to the DDR3 specification for improved performance and efficiency.
The chip is designed for high-density memory applications, providing a data bus width of 8 bits and supporting features like burst mode operations and deep power-down modes for energy efficiency.
The primary functions of the K4B4G0846E-BMMA include data storage and data transfer in various electronic devices, particularly in applications requiring high-speed memory such as computers, mobile devices, and industrial equipment. It operates on a 1.5V supply voltage and supports a wide range of memory operations, including read, write, and refresh cycles, adhering to the DDR3 specification for improved performance and efficiency.
The chip is designed for high-density memory applications, providing a data bus width of 8 bits and supporting features like burst mode operations and deep power-down modes for energy efficiency.
Manufacturer
The K4B4G0846E-BMMA is manufactured by Samsung Electronics, a global leader in technology and consumer electronics. Samsung is a South Korean multinational conglomerate headquartered in Suwon, South Korea. The company is known for its diverse range of products, including semiconductors, consumer electronics, home appliances, and telecommunications equipment. Samsung is one of the largest manufacturers of memory chips, including DRAM and NAND flash, and it plays a significant role in the global semiconductor market. The K4B4G0846E-BMMA is a DDR3 SDRAM memory chip, which is typically used in various electronic devices, such as smartphones, tablets, and computers.
Application
The K4B4G0846E-BMMA is a 4Gb DDR3 SDRAM memory chip primarily used in applications such as laptops, desktop computers, and servers for dynamic memory storage. It can also be found in consumer electronics like TVs and gaming consoles, as well as in networking equipment and industrial devices requiring efficient data processing and storage solutions.
Equivalent
The K4B4G0846E-BMMA is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Micron MT41K256M16HA-125
2. Hynix H5TQ2G83AFR
3. Samsung K4B2G0846E-BMMA
Always verify compatibility with your specific application requirements.
1. Micron MT41K256M16HA-125
2. Hynix H5TQ2G83AFR
3. Samsung K4B2G0846E-BMMA
Always verify compatibility with your specific application requirements.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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