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K4B4G1646D-BYK0
DRAM
- 제조업체
- Mfr.부분 #K4B4G1646D-BYK0
- 패키지
- 데이터시트 K4B4G1646D-BYK0 DataSheet
- 재고 있음3958
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
개요
Description
K4B4G1646D-BYK0 is a specific model of DRAM (Dynamic Random Access Memory) produced by Samsung. It is a 64Mx4-bit asynchronous DRAM, commonly used in various electronic devices, including computers and other consumer electronics. This memory chip is designed for applications that require reliable data storage and retrieval.
The "K4B" prefix indicates the manufacturer (Samsung), while the "4G" denotes the capacity (4 gigabits). The "1646" signifies the organization of the memory cells, and "D" indicates it's a DRAM chip. "BYK0" typically refers to the specific packaging or production batch.
This memory type is crucial for enhancing device performance, as it allows for faster data access compared to older memory technologies. It is vital for applications that require efficient multitasking and high-speed data processing, contributing to the overall functionality and user experience of modern electronics.
The "K4B" prefix indicates the manufacturer (Samsung), while the "4G" denotes the capacity (4 gigabits). The "1646" signifies the organization of the memory cells, and "D" indicates it's a DRAM chip. "BYK0" typically refers to the specific packaging or production batch.
This memory type is crucial for enhancing device performance, as it allows for faster data access compared to older memory technologies. It is vital for applications that require efficient multitasking and high-speed data processing, contributing to the overall functionality and user experience of modern electronics.
Features
The K4B4G1646D-BYK0 is a high-performance 4Gb DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip. Key features include:
1. Density: 4 Gigabits (Gb), suitable for high-capacity memory applications.
2. Organization: Configured as 512 Meg x 8 bits, ideal for use in various devices requiring efficient memory architecture.
3. Data Rate: Supports DDR3 data rates, providing high-speed data transfer capabilities.
4. Voltage: Operates at a low voltage of 1.5V, contributing to lower power consumption and improved energy efficiency.
5. Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package, optimizing space on circuit boards.
6. Features: Includes features like programmable CAS latency, self-refresh, and write-leveling for improved performance and durability.
7. Applications: Suitable for use in mobile devices, laptops, and other consumer electronics requiring compact and efficient memory solutions.
Overall, the K4B4G1646D-BYK0 combines high capacity, speed, and low power consumption, making it a versatile choice for modern electronic applications.
1. Density: 4 Gigabits (Gb), suitable for high-capacity memory applications.
2. Organization: Configured as 512 Meg x 8 bits, ideal for use in various devices requiring efficient memory architecture.
3. Data Rate: Supports DDR3 data rates, providing high-speed data transfer capabilities.
4. Voltage: Operates at a low voltage of 1.5V, contributing to lower power consumption and improved energy efficiency.
5. Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package, optimizing space on circuit boards.
6. Features: Includes features like programmable CAS latency, self-refresh, and write-leveling for improved performance and durability.
7. Applications: Suitable for use in mobile devices, laptops, and other consumer electronics requiring compact and efficient memory solutions.
Overall, the K4B4G1646D-BYK0 combines high capacity, speed, and low power consumption, making it a versatile choice for modern electronic applications.
Package
The K4B4G1646D-BYK0 is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format.
Pinout
The K4B4G1646D-BYK0 is a 4Gb DDR3 SDRAM memory chip, specifically designed for various memory applications. It features a total pin count of 78 pins. The primary functions of this chip include data storage and management in computing systems, enabling high-speed access to data with a 16-bit data bus width.
This memory chip operates at a standard voltage of 1.5V and supports various data transfer rates, enhancing the performance of devices such as laptops, desktops, and servers. It also incorporates features like burst mode access, deep power-down mode, and various data integrity checks, making it suitable for energy-efficient applications while delivering high performance.
This memory chip operates at a standard voltage of 1.5V and supports various data transfer rates, enhancing the performance of devices such as laptops, desktops, and servers. It also incorporates features like burst mode access, deep power-down mode, and various data integrity checks, making it suitable for energy-efficient applications while delivering high performance.
Manufacturer
The K4B4G1646D-BYK0 is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is primarily known for its consumer electronics, including smartphones, televisions, and home appliances. However, it is also a major player in the semiconductor industry, producing a wide range of memory products, including DRAM and NAND flash memory. The K4B4G1646D-BYK0 is a 4Gb DDR3 SDRAM component, commonly used in various electronic devices such as smartphones, tablets, and laptops. Samsung Electronics is part of the larger Samsung Group, which operates in diverse sectors, including technology, construction, and finance. The company is recognized for its innovation and leadership in technology and has a significant global presence.
Application
The K4B4G1646D-BYK0 is a 4Gb DDR3 SDRAM memory chip primarily used in mobile devices, such as smartphones and tablets. Its applications include data storage for applications, operating systems, and multimedia content. Additionally, it is utilized in laptops, digital cameras, and other consumer electronics that require efficient memory solutions for improved performance and speed.
Equivalent
The K4B4G1646D-BYK0 is a 4Gb DDR3 SDRAM chip. Equivalent products include:
1. MT41K256M16HA-125
2. Hynix H5TQ4G63AFR
3. Samsung K4B4G1646D-BCMA
Always check specific datasheets for compatibility in voltage, speed, and pin configuration before substitution.
1. MT41K256M16HA-125
2. Hynix H5TQ4G63AFR
3. Samsung K4B4G1646D-BCMA
Always check specific datasheets for compatibility in voltage, speed, and pin configuration before substitution.
배송
배송 방법We
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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