이미지는 참조용만

K4F6E304HB-MGCJ

Name: K4F6E304HB-MGCJ
Rating: 4.7 (12 reviews)

16Gbit x32 LPDDR4 SMD Memory (ICs) RoHS

제조업체
Mfr.부분 #K4F6E304HB-MGCJ
패키지
데이터시트
재고 있음8818

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Packaging	SMD
Interface	LPDDR4
Memory Format	x32
Memory Size	16Gbit
Operating temperature	-25℃~+85℃
Voltage - Supply	1.8V;1.1V

개요

Description

K4F6E304HB-MGCJ is a specific type of DRAM (Dynamic Random Access Memory) chip, commonly used in electronic devices for temporary data storage. This memory module is typically characterized by its capacity, speed, and architecture. The designation indicates its manufacturer (K), memory type (4F6E304), and specific model (HB-MGCJ).
As a part of semiconductor technology, this chip is integral for running applications efficiently by allowing quick data access and retrieval. It is found in various consumer electronics such as smartphones, tablets, and computers, where it supports multitasking and performance enhancements.
Key features may include low power consumption, fast access times, and compatibility with various devices. Understanding the specifications and applications of K4F6E304HB-MGCJ is essential for engineers and designers when selecting memory solutions for their projects.

Features

The K4F6E304HB-MGCJ is a 64Mb (megabit) DRAM memory chip manufactured by Samsung. It is based on a 4-bit architecture and primarily used in mobile and embedded applications. Key features include:
1. Density: 64Mb capacity, suitable for various consumer electronics.
2. Technology: Low Power DDR (LPDDR) technology, optimized for mobile devices to reduce power consumption.
3. Speed: Operates at a speed of 400 Mbps, supporting fast data transfer rates.
4. Interface: Uses a synchronous DRAM interface for efficient communication with processors.
5. Package: Available in a compact package form factor, suitable for space-constrained applications.
6. Operating Voltage: Typically operates at a low voltage (1.8V), which enhances battery life in mobile devices.
7. Applications: Commonly used in smartphones, tablets, and other portable devices.
These features make the K4F6E304HB-MGCJ an ideal choice for modern mobile technology requiring efficient performance and low power consumption.

Package

The K4F6E304HB-MGCJ is packaged in a 96-ball FBGA (Fine Ball Grid Array) format. This type of packaging is commonly used for memory devices, allowing for a compact design and efficient thermal performance.

Pinout

The K4F6E304HB-MGCJ is a DRAM memory chip with a pin count of 60. It is a 3.3V, 512M x 32-bit (or 1GB) DDR2 SDRAM device. The functions of the pins include power supply, ground, data input/output, address input, control signals, and clock signals necessary for data transfer and memory operations.
Key pin functions include:
- VDD (Power Supply): Provides power to the chip.
- VSS (Ground): Ground connection.
- DQ (Data I/O): Data input/output pins for transferring data.
- A (Address): Address input pins to select memory locations.
- WE (Write Enable): Controls write operations.
- OE (Output Enable): Controls data output.
- RAS, CAS (Row and Column Address Strobe): Signals for memory access timing.
This chip is commonly used in mobile devices and other applications requiring efficient memory solutions.

Manufacturer

The K4F6E304HB-MGCJ is manufactured by Samsung Electronics, a South Korean multinational electronics company. Samsung is a leading manufacturer in the fields of consumer electronics, semiconductors, and telecommunications equipment. It is well-known for its diverse product range, including smartphones, televisions, home appliances, and memory chips. The company is a key player in the global semiconductor market, producing a variety of memory products such as DRAM and NAND flash, which are essential components in modern electronics. Samsung Electronics is part of the larger Samsung Group, which comprises numerous subsidiaries and affiliated businesses across various industries, including construction, shipbuilding, and finance.

Application

K4F6E304HB-MGCJ is a NAND flash memory component commonly used in various applications, including smartphones, tablets, and other portable electronic devices. It is also utilized in automotive systems, industrial equipment, and embedded systems for data storage, firmware updates, and multimedia content. Its high-speed performance and reliability make it suitable for both consumer and industrial applications.

Equivalent

The K4F6E304HB-MGCJ chip is a DRAM memory component. Equivalent products include the K4F6E304HB-MGCA and other similar DRAM chips from manufacturers like Samsung, Micron, or Hynix with identical specifications such as density, package type, and timing characteristics. Always verify compatibility based on specific application requirements and datasheets.