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K4FBE3D4HM-THCL

Name: K4FBE3D4HM-THCL
Rating: 4.7 (12 reviews)

32Gbit x32 LPDDR4 FBGA-200 Memory (ICs) RoHS

제조업체
Mfr.부분 #K4FBE3D4HM-THCL
패키지
데이터시트
재고 있음19052

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100% 원래 &새로운

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365 일 보장

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사양

Packaging	FBGA-200
Interface	LPDDR4
Memory Format	x32
Memory Size	32Gbit
Operating temperature	-40℃~+105℃
Voltage - Supply	1.8V;1.1V

개요

Description

K4FBE3D4HM-THCL is likely a specific part number or code associated with a type of electronic component, such as a memory chip or integrated circuit. Components like these are often used in various applications, including computing and telecommunications.
To provide a brief overview, "K4FBE" suggests it may be a NAND flash memory or DRAM module, while "3D4HM" could indicate specific technical specifications such as capacity, speed, or packaging type. "THCL" may refer to a manufacturing or design variation, or possibly denote a specific production lot.
For precise details, including specifications, applications, and compatibility, it is recommended to consult the manufacturer's datasheet or technical documentation associated with this part number. This information will provide insights into its functionality, pin configuration, electrical characteristics, and recommended usage scenarios.

Features

The K4FBE3D4HM-THCL is a mobile DRAM component from Samsung, primarily designed for use in smartphones and tablets. Here are its key features:
1. Capacity: Typically offers 4GB of memory, enhancing multitasking and performance in mobile devices.
2. Type: It is a LPDDR4 (Low Power Double Data Rate 4) DRAM, known for its efficiency and speed.
3. Data Rate: Supports high data transfer rates up to 4266 MT/s, ensuring fast data access and improved overall performance.
4. Low Power Consumption: Designed to operate at low voltages (1.1V), extending battery life in mobile applications.
5. Package: Comes in a compact, small form factor, suitable for space-constrained designs in portable devices.
6. Thermal Performance: Offers improved thermal performance, contributing to device reliability during intensive tasks.
These features make the K4FBE3D4HM-THCL ideal for high-performance mobile applications, balancing speed, efficiency, and power consumption.

Package

The K4FBE3D4HM-THCL is packaged in a Thin-Die BGA (Ball Grid Array) format. This package type is designed for high-density applications, allowing for efficient thermal management and space-saving on PCBs.

Pinout

The K4FBE3D4HM-THCL is a DRAM memory chip with a pin count of 78. It is typically used in applications that require high-density storage solutions, such as mobile devices and embedded systems. This chip features a 4Gb (gigabit) capacity, organized as 512MB x 8 bits, and utilizes a double data rate (DDR) interface. Its main functions include data storage, retrieval, and buffering, providing high-speed access to information for various electronic applications. The device operates at low voltage, contributing to energy efficiency, and supports a range of memory functions governed by its DDR specification.

Manufacturer

The K4FBE3D4HM-THCL is manufactured by Samsung Electronics. Samsung Electronics is a South Korean multinational company and a major player in the electronics industry. It is a subsidiary of the Samsung Group and is known for its wide range of products, including semiconductors, consumer electronics, mobile devices, and home appliances. As one of the largest manufacturers of memory chips and other electronic components globally, Samsung is heavily involved in research and development, innovation, and the production of advanced technology solutions. The company plays a significant role in shaping the electronics market and is recognized for its commitment to quality and technological advancements.

Application

K4FBE3D4HM-THCL is a NAND flash memory chip commonly used in consumer electronics such as smartphones, tablets, and laptops. Its application areas include data storage for operating systems, applications, and multimedia files. Additionally, it is utilized in embedded systems, automotive electronics, and IoT devices, where high-speed data access and reliability are essential.

Equivalent

The K4FBE3D4HM-THCL chip is equivalent to other DRAM products with similar specifications, such as the K4FBE3D4HM-THC, K4FBE3D4HM-TC, and similar models from other manufacturers like Micron or Hynix. For precise compatibility, refer to the datasheets of specific alternatives, as well as pin configurations and timings. Always check for the latest data from manufacturers for the most accurate equivalents.