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K4T1G084QF-BCF7

Name: K4T1G084QF-BCF7
Rating: 4.7 (12 reviews)

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Mfr.부분 #K4T1G084QF-BCF7
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사양

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Minimum Operating Supply Voltage (V)	1.7
Typical Operating Supply Voltage (V)	1.8
Maximum Operating Supply Voltage (V)	1.9
Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	95
Mounting	Surface Mount
Package Width	7.5
Package Length	9.5
PCB changed	60
Standard Package Name	BGA
Supplier Package	FBGA
Pin Count	60
Lead Shape	Ball
Chip Density (bit)	1G
Number of Bits/Word (bit)	8
Data Bus Width (bit)	8
Maximum Clock Rate (MHz)	800
DRAM Type	DDR2 SDRAM
Organization	128Mx8
Number of Internal Banks	8
Number of Words per Bank	16M
Address Bus Width (bit)	17
Operating Current (mA)	80
Number of I/O Lines (bit)	8
Maximum Access Time (ns)	0.4
Interface Type	SSTL_1.8

개요

Description

K4T1G084QF-BCF7 is a type of DRAM (Dynamic Random Access Memory) chip produced by Samsung, specifically designed for mobile applications. It is part of the LPDDR4 (Low Power Double Data Rate 4) family, which offers higher data transfer rates while maintaining lower power consumption compared to its predecessors.
This memory module typically features a 1GB capacity, allowing for enhanced multitasking and improved performance in mobile devices such as smartphones and tablets. The chip operates at a voltage of around 1.1V, which contributes to energy efficiency and extended battery life.
Applications of K4T1G084QF-BCF7 are primarily found in mobile computing, where speed and power efficiency are crucial. Its design follows rigorous reliability and performance standards, making it suitable for high-demand environments in consumer electronics.

Package

The K4T1G084QF-BCF7 is packaged in a 96-ball FBGA (Fine Ball Grid Array) format. This package type is designed for compactness and efficient thermal and electrical performance, suitable for mobile and portable applications.

Pinout

The K4T1G084QF-BCF7 is a 1 Gb (Gigabit) DDR3 SDRAM memory chip. It comes in a 78-ball FBGA (Fine Ball Grid Array) package. The pin count is 78, and each ball serves specific functions related to power, ground, data input/output, and control signals.
Key functions include:
- Data I/O: Used for the transmission and reception of data.
- Address lines: Used to select memory locations.
- Control signals: Such as Chip Select (CS), Write Enable (WE), and Read Enable (RE), which manage read and write operations.
- Power supply and ground balls for proper operation of the chip.
This memory is typically utilized in applications like mobile devices, tablets, and other compact electronics requiring low power consumption and high-speed data access.

Manufacturer

The manufacturer of the K4T1G084QF-BCF7 is Samsung Electronics. Samsung is a South Korean multinational conglomerate that operates in various sectors, including consumer electronics, information technology, and telecommunications. It is one of the largest manufacturers of semiconductors globally, producing a wide range of products such as DRAM, NAND flash memory, and system LSI. In addition to semiconductors, Samsung is well-known for its smartphones, televisions, and home appliances, making it a key player in the global technology market. The K4T1G084QF-BCF7 specifically refers to a 1Gb DDR3 SDRAM chip, commonly used in various electronic devices for memory applications.

Application

The K4T1G084QF-BCF7 is a 1Gb DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, mobile devices, laptops, and embedded systems. It supports high-speed data processing for tasks ranging from gaming to multimedia applications, as well as in networking and telecommunications equipment. Its low power consumption makes it suitable for portable devices.

Equivalent

The K4T1G084QF-BCF7 is a 1Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ1G83AFR
2. Micron MT41K1G8RH-125
3. Samsung K4B2G0846E-BCK0
Ensure compatibility based on specifications like speed, voltage, and package type when selecting alternatives.