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K9F4G08U0B-PCB0
- 제조업체
- Mfr.부분 #K9F4G08U0B-PCB0
- 패키지
- 데이터시트
- 재고 있음18923
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배송 준비 24 시간
365 일 보장
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사양
| Manufacturer | Samsung Electro-Mechanics |
| Package | TSOP-48-12mm |
개요
Description
The K9F4G08U0B-PCB0 is a NAND flash memory chip produced by Samsung, used primarily in various electronic devices for data storage. It features a capacity of 4 Gb (gigabits), making it suitable for applications requiring moderate amounts of storage, such as smartphones, tablets, and other portable electronics.
This NAND chip incorporates a low-power design, enhancing energy efficiency and prolonging battery life in mobile devices. It utilizes a multi-level cell (MLC) architecture, allowing it to store more than one bit of data per cell, which increases its storage density.
The K9F4G08U0B-PCB0 is characterized by its high-speed read and write operations, making it ideal for applications that demand quick data access. Additionally, it supports a range of interfaces, ensuring compatibility with various system architectures. Overall, this NAND flash memory is critical for enhancing the performance and reliability of modern electronic devices.
This NAND chip incorporates a low-power design, enhancing energy efficiency and prolonging battery life in mobile devices. It utilizes a multi-level cell (MLC) architecture, allowing it to store more than one bit of data per cell, which increases its storage density.
The K9F4G08U0B-PCB0 is characterized by its high-speed read and write operations, making it ideal for applications that demand quick data access. Additionally, it supports a range of interfaces, ensuring compatibility with various system architectures. Overall, this NAND flash memory is critical for enhancing the performance and reliability of modern electronic devices.
Features
The K9F4G08U0B-PCB0 is a NAND Flash memory device produced by Samsung. It features:
1. Density: 4Gb (Gigabits) capacity, suitable for various applications.
2. Interface: On-chip asynchronous interface, supporting multiple I/O operations for efficient data transfer.
3. Architecture: Multilevel cell (MLC) technology, allowing multiple bits per cell to increase storage density.
4. Read/Write Speed: Optimized for high-speed read and write operations, enhancing performance in data-intensive applications.
5. Endurance: Supports a specified number of program/erase cycles, typically around 10,000 or more, making it suitable for consumer and industrial applications.
6. Power Consumption: Low power operation, contributing to energy efficiency in portable devices.
7. Package: Available in a small form-factor package, facilitating integration into various electronic designs.
This device is commonly used in mobile devices, USB drives, and other embedded systems requiring reliable storage solutions.
1. Density: 4Gb (Gigabits) capacity, suitable for various applications.
2. Interface: On-chip asynchronous interface, supporting multiple I/O operations for efficient data transfer.
3. Architecture: Multilevel cell (MLC) technology, allowing multiple bits per cell to increase storage density.
4. Read/Write Speed: Optimized for high-speed read and write operations, enhancing performance in data-intensive applications.
5. Endurance: Supports a specified number of program/erase cycles, typically around 10,000 or more, making it suitable for consumer and industrial applications.
6. Power Consumption: Low power operation, contributing to energy efficiency in portable devices.
7. Package: Available in a small form-factor package, facilitating integration into various electronic designs.
This device is commonly used in mobile devices, USB drives, and other embedded systems requiring reliable storage solutions.
Package
The K9F4G08U0B-PCB0 is a NAND flash memory chip packaged in a TSOP (Thin Small Outline Package) type. This package design is commonly used for memory devices due to its compact size and efficiency in electronic applications.
Pinout
The K9F4G08U0B-PCB0 is a NAND flash memory device produced by Samsung. It features a total of 48 pins.
The primary functions of these pins include:
1. Data I/O Pins (DQ0-DQ7): 8 pins for data input and output.
2. Address Pins (A0-A18): 19 pins used for addressing memory locations.
3. Control Pins:
- CE# (Chip Enable): Activates the chip.
- WE# (Write Enable): Initiates write operations.
- RE# (Read Enable): Initiates read operations.
- OE# (Output Enable): Controls data output.
4. WP# (Write Protect): Protects data from being erased or overwritten.
5. R/B (Ready/Busy): Indicates the status of read/write operations.
6. VCC: Power supply pin.
7. GND: Ground pin.
This device is typically used in applications requiring non-volatile storage, such as SSDs and mobile devices.
The primary functions of these pins include:
1. Data I/O Pins (DQ0-DQ7): 8 pins for data input and output.
2. Address Pins (A0-A18): 19 pins used for addressing memory locations.
3. Control Pins:
- CE# (Chip Enable): Activates the chip.
- WE# (Write Enable): Initiates write operations.
- RE# (Read Enable): Initiates read operations.
- OE# (Output Enable): Controls data output.
4. WP# (Write Protect): Protects data from being erased or overwritten.
5. R/B (Ready/Busy): Indicates the status of read/write operations.
6. VCC: Power supply pin.
7. GND: Ground pin.
This device is typically used in applications requiring non-volatile storage, such as SSDs and mobile devices.
Manufacturer
The K9F4G08U0B-PCB0 is a NAND flash memory chip manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate primarily known for its electronics division, which is one of the largest manufacturers of semiconductors, including memory chips, SSDs, and mobile devices. Founded in 1938, Samsung has diversified its operations across various sectors, including consumer electronics, telecommunications, and home appliances, but it is particularly renowned for its advancements in semiconductor technology. The company focuses on innovation and research, playing a significant role in the global electronics market.
Application
The K9F4G08U0B-PCB0 is a 4 Gb NAND Flash memory device primarily used in applications such as mobile phones, tablets, solid-state drives (SSDs), digital cameras, and other portable electronic devices. It offers high-density storage for multimedia content, data caching, and firmware storage, supporting various file systems and enhancing overall device performance.
Equivalent
The K9F4G08U0B-PCB0 is a NAND flash memory chip. Equivalent products include:
1. Micron MT29F4G08ABAEAWP
2. Toshiba TC58NVG4D1HBAI4
3. Samsung K9F4G08U0A
It's important to verify specific characteristics like package type, voltage, and memory architecture when considering alternatives.
1. Micron MT29F4G08ABAEAWP
2. Toshiba TC58NVG4D1HBAI4
3. Samsung K9F4G08U0A
It's important to verify specific characteristics like package type, voltage, and memory architecture when considering alternatives.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
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