L6384ED013TR

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L6384ED013TR

IC GATE DRVR HALF-BRIDGE 8SO

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배송 준비 24 시간

365 일 보장

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사양

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Synchronous
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 14.6V ~ 16.6V
LogicVoltage-VILVIH 1.5V, 3.6V
Current-PeakOutput(SourceSink) 400mA, 650mA
InputType Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 50ns, 30ns
OperatingTemperature -45°C ~ 125°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

개요

Description

The L6384ED013TR is an integrated circuit primarily used in electronic applications for managing power supply and controlling power devices. It typically functions as a high-voltage gate driver, which is essential in operating devices like MOSFETs and IGBTs. This IC is designed to improve the efficiency and performance of power converters by providing precise control signals to the power transistors.
Key features of the L6384ED013TR often include high switching speeds, protection features like undervoltage lockout (UVLO), and the ability to work with high voltages, making it suitable for use in industrial and consumer electronics where robust power management is required. Its compact packaging also allows it to be easily integrated into various electronic systems, including power supplies, motor drives, and other energy conversion devices.
In summary, the L6384ED013TR serves as an essential component in modern electronic designs, offering enhanced control over power delivery systems, thus optimizing performance and efficiency in a wide range of applications.

Features

The L6384ED013TR is a high-voltage half-bridge gate driver IC designed for driving N-channel MOSFETs or IGBTs in a half-bridge configuration. Key features include:
1. High Voltage Capability: Can handle up to 600V, making it suitable for applications involving high voltages.

2. Floating Channels: Designed for bootstrap operation to drive the high-side MOSFET or IGBT effectively.
3. Integrated Bootstrap Diode: Facilitates the bootstrap operation, simplifying the design and reducing external component count.
4. Under-Voltage Lockout (UVLO): Protects the system by preventing operation if the supply voltage drops below a specified threshold.
5. Interlocking Function: Prevents both the high-side and low-side switches from being on simultaneously, reducing the risk of shoot-through.
6. dV/dt Immunity: Has a high tolerance to fast voltage changes, enhancing reliability in noisy environments.
7. Low Quiescent Current: Efficient in terms of power consumption when in idle mode.
These features make the L6384ED013TR suitable for use in various applications, such as motor drives, induction heating, and power inverters, where reliable and efficient power management is essential.

Package

The L6384ED013TR is a high-voltage half-bridge driver IC, typically available in a surface-mount package known as SOIC-8 (Small Outline Integrated Circuit with 8 pins). This package type is designed for compact and efficient mounting on circuit boards.

Pinout

The L6384ED013TR is a high-voltage high-speed gate driver IC manufactured by STMicroelectronics, designed for driving N-channel power MOSFETs or IGBTs. This device is typically used in applications such as motor drivers, switch-mode power supplies, and other power electronics systems.
The L6384ED013TR comes in a 14-pin SOIC (Small Outline Integrated Circuit) package. Key features include a high-voltage rail up to 600V, under-voltage lockout, interlocking function, and a wide range of operating temperatures. The IC is designed to provide efficient and reliable driving of power transistors, ensuring good switching performance and protection.
Each pin of the L6384ED013TR serves specific functions, such as power input, control inputs for the half-bridge, output pins for driving the gates of power transistors, and pins for setting the logic functions. For detailed pin functions and configurations, users should consult the manufacturer's datasheet.

Manufacturer

The manufacturer of the L6384ED013TR is STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products and solutions. The company serves a variety of industries, including automotive, industrial, personal electronics, communications equipment, and computers. As one of the leading semiconductor companies in the world, STMicroelectronics is known for its innovation and technological expertise in areas such as microcontrollers, sensors, power management, and digital and analog ICs.

Application

The L6384ED013TR is a high-voltage half-bridge gate driver IC commonly used in power electronics applications. Its primary application areas include driving MOSFETs and IGBTs in various configurations, such as inverters, motor drives, and power conversion systems. It is suitable for use in industrial motor control, home appliances, and renewable energy systems, where efficient and reliable driving of high-voltage power transistors is required. Its features are particularly beneficial in applications demanding robustness and high performance in handling inductive loads and switching operations.

Equivalent

The L6384ED013TR is a high-voltage gate driver often used in motor control and power supply applications. Equivalent products include the IRS2110 from Infineon, the UCC27714 from Texas Instruments, and the 2ED2184 from Infineon. These products offer similar functionalities, such as high-voltage tolerance and the ability to drive MOSFETs and IGBTs, although specific features and performance may vary. Always compare datasheets to ensure compatibility with your application.

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