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LBAT54SLT1G

Name: LBAT54SLT1G
Rating: 4.7 (12 reviews)

Schottky Diodes & Rectifiers

제조업체
Mfr.부분 #LBAT54SLT1G
패키지
데이터시트
재고 있음28197

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

개요

Description

The LBAT54SLT1G is a high-performance, low-power N-channel MOSFET designed for various applications, including power management, load switching, and signal amplification. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 24A, making it suitable for both low and high voltage operations. The device has a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation.
Packaged in a compact SOT-23 form factor, the LBAT54SLT1G is ideal for space-constrained designs. Its fast switching capabilities make it suitable for high-frequency applications. The MOSFET is also characterized by excellent thermal performance, allowing for reliable operation under varying temperature conditions.
Overall, the LBAT54SLT1G is widely used in consumer electronics, automotive systems, and industrial applications, where efficient power management is crucial.

Features

The LBAT54SLT1G is a high-performance, low-voltage N-channel MOSFET designed for various applications such as power management and load switching. Key features include:
- Low On-Resistance: Provides efficient power handling and minimizes heat generation.
- Low Gate Threshold Voltage: Ensures compatibility with low-voltage drive circuits.
- High Speed Switching: Suitable for fast switching applications, enhancing overall performance.
- Compact Package: Available in a SOT-23 package, making it space-efficient for PCB designs.
- Max Continuous Drain Current: Allows for significant current handling, ideal for demanding applications.
- Operating Temperature Range: Supports a wide range of temperatures, ensuring reliability in diverse conditions.
Overall, the LBAT54SLT1G is an excellent choice for compact, efficient power management solutions in consumer electronics, automotive, and industrial applications.

Package

The LBAT54SLT1G is packaged in a SOT-23 (Small Outline Transistor) package type. This compact, surface-mount design is commonly used for discrete semiconductor devices.

Pinout

The LBAT54SLT1G is a Schottky barrier diode in a SOT-23 package. It features a total of 3 pins. The functions of the pins are as follows:
1. Anode (A): This is where the current enters the diode.
2. Cathode (K): This is the output side of the diode, where the current exits after passing through.
3. Unused Pin: The third pin is typically not connected to any function in this configuration.
The LBAT54SLT1G is designed for applications requiring fast switching and low forward voltage drop, making it suitable for rectification and voltage clamping in various electronic circuits.

Manufacturer

The LBAT54SLT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital signal processing, as well as discrete components. The company serves various industries, including automotive, industrial, and telecommunications. ON Semiconductor is known for its commitment to sustainability and innovation, providing advanced technologies that facilitate energy efficiency and performance improvements in electronic devices.

Application

The LBAT54SLT1G is a low-power Schottky barrier rectifier used in various applications such as power management, voltage clamping, and signal detection. It is suitable for use in power supplies, DC-DC converters, and battery protection circuits due to its fast switching speeds and low forward voltage drop. Other applications include RF amplifiers and rectification in automotive and industrial circuits.

Equivalent

The LBAT54SLT1G is a Schottky barrier rectifier. Equivalent products include:
1. 1N5817
2. 1N5818
3. 1N5820
4. 1N5821
Ensure to check specific voltage and current ratings to confirm compatibility for your application.