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LM5106SD
IC GATE DRVR HALF-BRIDGE 10WSON
- 제조업체
- Mfr.부분 #LM5106SD
- 패키지 WDFN-10
- 데이터시트
- 재고 있음3047
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 8V ~ 14V |
| LogicVoltage-VILVIH | 0.8V, 2.2V |
| Current-PeakOutput(SourceSink) | 1.2A, 1.8A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 118 V |
| Rise/FallTime(Typ) | 15ns, 10ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 10-WDFN Exposed Pad |
개요
Description
The device operates over a wide voltage range and is designed for high efficiency, enabling it to drive loads with minimal power loss. The LM5106SD is equipped with under-voltage lockout (UVLO) for safety and reliability, ensuring the MOSFETs are not driven when the supply voltage is below a certain threshold. Its compact packaging and high integration level make it ideal for use in applications like motor drives, power supplies, and DC-DC converters.
Understanding its datasheet and application notes is crucial for effective integration into electronic designs, ensuring optimal performance and preventing circuit malfunction.
Features
1. Input Supply Voltage Range: It supports a wide input supply voltage range, typically from 9V to 14V, making it versatile for various applications.
2. Output: The device provides separate high-side and low-side gate drive outputs, allowing for efficient driving of N-channel MOSFETs.
3. Bootstrap Diode: The LM5106SD includes an integrated bootstrap diode, which simplifies the design and reduces external component count.
4. Low Propagation Delay: It features low propagation delay, ensuring fast switching times and improved system performance.
5. Undervoltage Lockout (UVLO): The driver incorporates undervoltage lockout protection for both high and low-side drivers, enhancing system reliability by preventing faulty operations.
6. Level Shifting: It includes level-shifting capability to accommodate different logic levels between the input and output.
7. Thermal Protection: The device is equipped with thermal protection to prevent overheating under thermal stress conditions.
8. Surface-Mount Package: The LM5106SD is available in a small surface-mount package, making it suitable for space-constrained designs.
These features make the LM5106SD a robust and efficient solution for driving MOSFETs in various high-frequency power management applications.
Package
Pinout
1. HB (High-Side Bootstrap Voltage): Provides the bootstrap voltage to the high-side driver.
2. HO (High-Side Output): Connects to the gate of the high-side MOSFET.
3. HS (High-Side Source): Connects to the source of the high-side MOSFET and the bootstrap capacitor return path.
4. HI (High-Side Input): Input signal for controlling the high-side driver.
5. VDD (Supply Voltage): Powers the low-side driver and logic circuits.
6. LI (Low-Side Input): Input signal for controlling the low-side driver.
7. LO (Low-Side Output): Connects to the gate of the low-side MOSFET.
8. VSS (Ground): Ground reference for the IC.
9. NC (No Connect): Not internally connected; may be used for mechanical support or thermal dissipation.
10. HS (High-Side Source): Connects to the source of the high-side MOSFET, typically the midpoint of the half-bridge.
The LM5106SD is used in applications requiring efficient and reliable MOSFET driving, such as DC-DC converters and motor drivers.
Manufacturer
Application
Equivalent
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