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M14D5121632A-2.5BG2A

Name: M14D5121632A-2.5BG2A
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Mfr.부분 #M14D5121632A-2.5BG2A
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데이터시트 M14D5121632A-2.5BG2A DataSheet
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사양

Manufacturer	ESMT(Elite Semicon Memory Tech)
Package	BGA-84(8x12.5)

개요

Description

The M14D5121632A-2.5BG2A is a type of DRAM (Dynamic Random Access Memory) module, specifically a DDR2 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip. It is designed for high-speed data processing and is commonly used in computing and electronic devices that require efficient memory solutions. The designation indicates key specifications such as its capacity (512 Megabits), organization (16 Meg x 32 bits), and voltage rating (2.5V). DDR2 memory offers improved performance and lower power consumption compared to its predecessor, DDR SDRAM, making it suitable for applications in laptops, desktops, and various electronics during its era of popularity. Due to its relatively older technology, newer systems have transitioned to DDR3, DDR4, and beyond, which offer enhanced speed and efficiency.

Features

The M14D5121632A-2.5BG2A is a 512Mb (64MB) DDR2 SDRAM memory chip designed for high-performance applications. Key features include:
1. Memory Type: DDR2 SDRAM, allowing faster data rates compared to DDR SDRAM.
2. Capacity: 512 Megabits, organized as 64 Megabytes x 8.
3. Data Rate: Operates at a speed of 400 Mbps.
4. Voltage: Low operating voltage of 2.5V, enhancing energy efficiency.
5. Package: Typically available in a 60-ball FBGA (Fine Ball Grid Array) package for compact design.
6. Interface: Supports a 4-bit data interface, facilitating easy integration with various systems.
7. Latency: Offers low latency, beneficial for applications requiring quick data access.
This memory chip is suitable for use in consumer electronics, networking systems, and other devices that demand reliable memory performance.

Package

The M14D5121632A-2.5BG2A is typically packaged in a TSOP-II (Thin Small Outline Package) form factor. This package type is designed for high-density memory chips, providing a compact footprint suitable for various electronic applications.

Pinout

The M14D5121632A-2.5BG2A is a 512M x 16-bit DRAM memory chip. It typically features a 54-pin TSOP II package. The pins are used for various functions, including data input/output, address input, control signals, and power supply connections. Key functions include:
- Data Pins (DQ0-DQ15): 16 data lines for reading/writing.
- Address Pins (A0-A18): Used to select memory locations.
- Control Pins: Includes chip select (CS), write enable (WE), and output enable (OE).
- Power Supply Pins: Typically VDD for power and VSS for ground.
This configuration enables the chip to facilitate high-speed data processing in applications like mobile devices and consumer electronics.

Manufacturer

The manufacturer of the M14D5121632A-2.5BG2A is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron develops a range of products including DRAM, NAND flash memory, and solid-state drives (SSDs) used in various applications such as computing, mobile devices, and networking. The company focuses on innovation and technology to support data-driven applications and aims to provide high-performance memory solutions for customers across multiple sectors.

Application

The M14D5121632A-2.5BG2A is a DDR2 SDRAM memory module typically used in applications requiring high-speed data processing, such as networking equipment, telecommunications, automotive systems, and consumer electronics. Its low power consumption makes it suitable for portable devices and embedded systems, while its reliable performance supports applications in industrial automation and control systems.

Equivalent

The M14D5121632A-2.5BG2A chip is a 512Mb DDR SDRAM memory device. Equivalent products include other 512Mb DDR SDRAM chips such as MT46V512M8 (Micron), K4S561632H (Samsung), and HY57V561620 (Hynix). Ensure compatibility with your specific application requirements, including speed, voltage, and packaging.