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MJD200T4G
TRANS NPN 25V 5A DPAK
- 제조업체
- Mfr.부분 #MJD200T4G
- 패키지 DPAK-3
- 데이터시트
- 재고 있음7487
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 5 A |
| Voltage-CollectorEmitterBreakdown(Max) | 25 V |
| VceSaturation(Max)@IbIc | 1.8V @ 1A, 5A |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 45 @ 2A, 1V |
| Power-Max | 1.4 W |
| Frequency-Transition | 65MHz |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
개요
Description
Key specifications often include a maximum drain-source voltage (V_DS), a drain current (I_D), and an R_DS(on) that indicates its efficiency. The MJD200T4G is packaged in a TO-220 form factor, facilitating heat dissipation.
Engineers often choose this MOSFET for its reliability, thermal performance, and ease of integration into circuit designs. It is crucial for applications requiring rapid switching and minimal energy loss. For detailed characteristics, users should consult the manufacturer's datasheet to ensure compatibility with their specific circuits.
Features
1. Voltage Ratings: Typically has a maximum drain-source voltage (V_DS) of around 60V, making it suitable for medium voltage applications.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 30A, depending on thermal conditions.
3. Low R_DS(on): Offers low on-resistance, reducing conduction losses and improving efficiency.
4. Fast Switching: Designed for high-speed switching, ideal for applications such as DC-DC converters.
5. Thermal Performance: Features a TO-220 package that aids in heat dissipation, ensuring reliable operation at higher power levels.
6. Gate-Source Voltage: Supports a gate-source voltage (V_GS) of ±20V, allowing for compatibility with standard gate drive circuits.
7. Applications: Commonly used in power supplies, motor drives, and automotive applications due to its robustness and efficiency.
These features make the MJD200T4G a versatile choice in power electronics.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the load current enters the MOSFET. It connects to the power supply or load in a circuit.
3. Source (S) - This pin is where the current exits the MOSFET. It is typically connected to ground in a low-side switch configuration.
The MJD200T4G is commonly used in power management and switching applications due to its capability to handle high current and voltage levels.
Manufacturer
Application
Equivalent
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