MJE172G

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MJE172G

TRANS PNP 80V 3A TO-126

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  • Mfr.부분 #MJE172G
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사양

Part Status Active
Base Product Number MJE172
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V
Power - Max 1.5 W
Frequency - Transition 50MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package TO-225AA, TO-126-3
Supplier Device Package TO-126
Packaging Bulk

개요

Description

MJE172G is a high-voltage NPN transistor designed for various electronic applications, particularly in power amplification and switching circuits. It is known for its robust construction, allowing it to handle substantial current and voltage levels, making it suitable for use in audio amplifiers, power supplies, and motor controls. The transistor typically features a maximum collector-emitter voltage (Vce) of around 60 volts and a maximum collector current (Ic) of approximately 8 amps.
MJE172G is valued for its high switching speed and reliability, which are crucial in applications requiring efficient performance. Its package often comes in TO-220 or similar configurations, facilitating effective heat dissipation. This transistor is widely used in consumer electronics, industrial equipment, and automotive applications due to its versatility and performance characteristics.
Understanding MJE172G’s specifications, such as gain (hFE), thermal resistance, and frequency response, is key for engineers and designers to effectively integrate it into their circuits.

Features

The MJE172G is a high-voltage NPN power transistor designed for various switching and amplification applications. Key features include:
1. Voltage Rating: It can handle a collector-emitter voltage (Vce) of up to 60V, making it suitable for high-voltage applications.
2. Current Rating: It supports continuous collector current (Ic) of 5A, allowing it to drive moderate loads effectively.
3. Power Dissipation: The transistor has a maximum power dissipation of around 30W, providing robustness in demanding conditions.
4. Gain: It offers a current gain (hFE) ranging from 20 to 100, ensuring efficient signal amplification.
5. Package Type: Typically available in TO-220 package, facilitating easy mounting and heat dissipation.
6. Temperature Range: It operates effectively over a temperature range from -55°C to +150°C, ensuring reliability in various environments.
These features make the MJE172G suitable for applications in power amplifiers, motor controls, and switching regulators.

Package

The MJE172G is typically packaged in a TO-220 format, which is a metal can package designed for high-power applications, providing efficient heat dissipation.

Pinout

The MJE172G is a high-voltage NPN power transistor typically used in amplifier and switching applications. It features a 3-pin configuration, with the following pin assignments:
1. Base (B) - The control terminal that receives the input signal.
2. Collector (C) - The terminal through which the main current flows, connected to the load.
3. Emitter (E) - The terminal through which the current exits the transistor, typically connected to ground in common-emitter configurations.
The MJE172G is designed for high-voltage applications, with a maximum collector-emitter voltage (Vce) rating of around 60V and a collector current (Ic) rating of up to 8A. It is often used in power switching circuits, linear amplifiers, and in other applications where robust performance is required.

Manufacturer

The MJE172G is manufactured by ON Semiconductor, a global semiconductor company based in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including discrete devices, analog ICs, and power management solutions. The company serves various industries, including automotive, industrial, communications, and consumer electronics, providing innovative technologies to support energy efficiency and sustainability. ON Semiconductor is known for its commitment to quality and performance in semiconductor solutions.

Application

The MJE172G is a high-voltage NPN transistor commonly used in applications such as power amplifiers, switching regulators, and motor control circuits. It is suitable for use in general-purpose amplification, high-speed switching, and in power supply circuits where efficient control of high current and voltage is needed. Additionally, it can be found in audio amplification and signal processing applications.

Equivalent

The MJE172G is a high voltage NPN transistor. Equivalent products include:
1. MJE182G
2. MJE2955 (for complementary use)
3. 2N5401 (offers similar voltage and current ratings)
4. TIP31
Always verify specifications like voltage, current, and packaging before substitution.

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