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MMBT3904WT1G

Name: MMBT3904WT1G
Rating: 4.7 (12 reviews)

TRANS NPN 40V 0.2A SC70-3

제조업체
Mfr.부분 #MMBT3904WT1G
패키지 SC-70-3
데이터시트
재고 있음5275

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
TransistorType	NPN
Current-Collector(Ic)(Max)	200 mA
Voltage-CollectorEmitterBreakdown(Max)	40 V
VceSaturation(Max)@IbIc	300mV @ 5mA, 50mA
DCCurrentGain(hFE)(Min)@IcVce	100 @ 10mA, 1V
Power-Max	150 mW
Frequency-Transition	300MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	SC-70, SOT-323

개요

Description

MMBT3904WT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various switching and amplification applications. It features a low on-resistance, making it suitable for efficient power management in circuits. This component is often utilized in power supplies, motor drives, and as a switch in electronic devices due to its fast switching capabilities and high reliability.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 6.5A, and a low gate threshold voltage, allowing for easy drive with low-voltage logic. The device is housed in a compact SOT-23 package, which enhances its suitability for space-constrained applications.
MMBT3904WT1G is widely used in consumer electronics, automotive circuits, and industrial applications due to its versatility and robust performance characteristics. Always refer to the manufacturer's datasheet for detailed electrical parameters and application guidelines.

Features

The MMBT3904WT1G is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Key features include:
1. Maximum Collector-Emitter Voltage (Vce): 40V, allowing it to handle moderate voltage levels.
2. Maximum Collector Current (Ic): 200mA, suitable for small to medium current loads.
3. Gain (hFE): Typically ranges from 100 to 300, providing efficient amplification.
4. Package Type: Available in a surface-mount SOT-23 package, which is compact and suitable for automated assembly.
5. Operating Frequency: It can operate effectively up to 100 MHz, making it useful for RF applications.
6. Low Saturation Voltage: Ensures efficient switching characteristics.
7. Thermal Resistance: Good thermal performance, allowing for reliable operation in various environments.
Overall, the MMBT3904WT1G is versatile and widely used in consumer electronics, automotive, and industrial applications.

Package

The MMBT3904WT1G is packaged in a SOT-23 surface mount package. This compact package is designed for efficient use in various electronic applications, providing good thermal performance and minimizing space on printed circuit boards.

Pinout

The MMBT3904WT1G is a small-signal NPN bipolar junction transistor (BJT) packaged in a surface-mount SOT-23 configuration. It has a total of three pins.
Pin Functions:
1. Collector (C) - This is the terminal through which the majority of the current flows when the transistor is in the active region.
2. Base (B) - This terminal controls the transistor's operation; applying a small current to the base allows a larger current to flow from collector to emitter.
3. Emitter (E) - This is the terminal through which the current exits the transistor.
The MMBT3904 is commonly used for amplification and switching applications in electronic circuits.

Manufacturer

The MMBT3904WT1G is manufactured by ON Semiconductor, an American company that specializes in semiconductor components and solutions. ON Semiconductor designs and produces a wide range of products, including power management devices, sensors, and automotive components. The company serves various markets, including automotive, industrial, and consumer electronics, providing innovative technologies aimed at improving energy efficiency and performance. They focus on sustainable practices and advancing semiconductor technologies to meet the evolving demands of modern applications.

Application

The MMBT3904WT1G is a NPN bipolar junction transistor commonly used in low-power amplification and switching applications. Its typical applications include audio amplifiers, signal processing, and driving small loads. It is also utilized in consumer electronics, such as radios, televisions, and computer peripherals, due to its high-speed operation and low noise characteristics.

Equivalent

The MMBT3904WT1G is a NPN bipolar junction transistor (BJT). Equivalent products include the 2N3904, BC547, and BC548. These transistors have similar electrical characteristics and can often be used interchangeably in various applications, but always check the datasheets for specific parameters to ensure compatibility.