MMBTA13LT1G

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MMBTA13LT1G

TRANS NPN DARL 30V 0.3A SOT23-3

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사양

Part Status Active
Base Product Number MMBTA13
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 300 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V
Power - Max 225 mW
Frequency - Transition 125MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Packaging Cut Tape (CT), Tape & Reel (TR)

개요

Description

MMBTA13LT1G is a part of the MMBTA series of transistors, specifically a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is commonly used in various electronic applications due to its efficiency and high-speed switching capabilities. This transistor typically features a low on-resistance, which minimizes power loss during operation, making it ideal for power management and amplification tasks in circuits.
The device can handle substantial current and voltage levels, making it suitable for use in power supplies, motor drives, and other high-power applications. Its compact design allows for easy integration into smaller electronic devices. Understanding the characteristics, such as threshold voltage and gate capacitance, is crucial for designing circuits that utilize the MMBTA13LT1G effectively.
For specific applications and performance metrics, referring to the manufacturer's datasheet is recommended, as it provides detailed information on electrical characteristics, thermal performance, and recommended operating conditions.

Features

The MMBTA13LT1G is a high-performance N-channel MOSFET designed for various switching and amplification applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can manage continuous drain current (I_D) up to 4.2A, allowing for substantial power handling.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of about 0.1 ohms, which minimizes power loss during operation and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 1-2.5V, enabling it to be driven by low-voltage logic levels.
5. Package Type: It is available in a surface-mount DPAK package, which provides excellent thermal performance and ease of integration into PCB designs.
6. Fast Switching: Designed for fast switching applications, making it suitable for DC-DC converters and motor control.
Overall, the MMBTA13LT1G is an efficient and versatile MOSFET suitable for a wide range of electronic applications.

Package

The MMBTA13LT1G is packaged in a SOT-23 (Small Outline Transistor) package. This compact surface-mount package is commonly used for discrete semiconductor devices, offering a space-efficient design suitable for various electronic applications.

Pinout

The MMBTA13LT1G is a NPN bipolar junction transistor (BJT) packaged in a SOT-23 surface-mount configuration. It features three pins.
Here are the pin assignments and their functions:
1. Base (B): This pin is used to control the transistor's operation by applying a small input voltage or current.
2. Collector (C): This pin is connected to the load and is where the output current flows when the transistor is in an "on" state.
3. Emitter (E): This pin is connected to ground or the negative side of the circuit; it allows current to flow out of the transistor.
The MMBTA13LT1G is commonly used in low-power switching and amplification applications.

Manufacturer

The MMBTA13LT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor components, including analog, discrete, and power management devices. Their products are used in various applications such as automotive, industrial, consumer electronics, and communications. The company focuses on providing efficient energy solutions and is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The MMBTA13LT1G is a high-performance, low-noise N-channel MOSFET primarily used in applications such as power management, DC-DC converters, and audio amplification. Its features make it suitable for switching applications in consumer electronics, automotive systems, and industrial equipment. Additionally, it can be employed in LED drivers and power supply circuits, enhancing efficiency and performance in various electronic devices.

Equivalent

The MMBTA13LT1G is a general-purpose NPN transistor. Equivalent products include the 2N3904, 2N2222, and BC547. Always verify specifications like current, voltage ratings, and package type for compatibility with your application.

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