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MRF151G
RF MOSFET 50V 375-04
- 제조업체
- Mfr.부분 #MRF151G
- 패키지
- 데이터시트 MRF151G DataSheet
- 재고 있음2376
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사양
| Part Status | Active |
| Base Product Number | MRF151 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Source |
| Frequency | 175MHz |
| Gain | 16dB |
| Voltage - Test | 50 V |
| Current Rating (Amps) | 40A |
| Current - Test | 500 mA |
| Power - Output | 300W |
| Voltage - Rated | 125 V |
| Package | 375-04 |
| Supplier Device Package | 375-04, Style 2 |
| Packaging | Tray |
개요
Description
Key features of the MRF151G include a wide frequency range, high output power (up to several watts), and robust thermal performance. It is housed in a metal can package, which aids in heat dissipation. The transistor is designed to handle high gain and comes with built-in protection against thermal runaway, making it suitable for demanding applications such as broadcast and two-way radio systems.
Due to its reliable performance and efficiency, the MRF151G is widely used in both commercial and amateur radio applications. Proper matching and biasing are crucial for optimal performance. Users should refer to the manufacturer's datasheet for detailed specifications, application circuits, and handling instructions.
Features
1. Frequency Range: Operates efficiently from 150 MHz to 520 MHz, making it suitable for various communication systems.
2. Power Output: Delivers high output power, typically around 150 W, ensuring strong signal transmission.
3. Gain: Offers a high linear gain, typically around 15 dB, facilitating better signal amplification.
4. Efficiency: Provides high power-added efficiency (PAE), which minimizes heat generation and improves overall performance.
5. Thermal Management: Designed with robust thermal characteristics, it can handle high temperatures, ensuring reliable operation in demanding environments.
6. Package: Available in a metal flange package, promoting effective heat dissipation.
7. Applications: Ideal for use in commercial and industrial RF power amplifiers, including those for broadcast transmitters and other communication systems.
These features make the MRF151G a reliable choice for high-performance RF amplification in various applications.
Package
Pinout
Pin Configuration:
1. Collector (C) - Connected to the supply voltage and is the primary power output terminal.
2. Base (B) - The control terminal used to modulate the transistor's operation and gain.
3. Emitter (E) - Ground or reference point for the transistor, allowing current to flow out of the collector.
Function:
The MRF151G operates as a Class AB power amplifier, providing high efficiency and output power for RF transmission. It is suitable for linear amplification in communications systems and is commonly used in transmitters for mobile radio, amateur radio, and other RF applications. The device is designed to handle high voltages and currents, making it robust for demanding operational environments.
Manufacturer
Application
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