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MRF158
FET RF 65V 500MHZ 305A-01
- 제조업체
- Mfr.부분 #MRF158
- 패키지 305A-01
- 데이터시트 MRF158 DataSheet
- 재고 있음2396
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사양
| Package | Tray |
| Series | TMOS® |
| ProductStatus | Active |
| TransistorType | N-Channel |
| Frequency | 500MHz |
| Gain | 18dB |
| Voltage-Test | 28 V |
| CurrentRating(Amps) | 500mA |
| Current-Test | 25 mA |
| Power-Output | 2W |
| Voltage-Rated | 65 V |
| Package/Case | 305A-01 |
개요
Description
Key features of the MRF158 include its high gain, excellent linearity, and wide frequency response, making it suitable for both analog and digital modulation schemes. The device typically operates within the 30 MHz to 1 GHz frequency range, allowing it to be used in various communication systems.
The MRF158 is housed in a TO-220 package, which facilitates easy heat dissipation and mounting. It requires proper biasing and thermal management to ensure reliable operation, especially under high power conditions.
Overall, the MRF158 is a versatile component in the RF domain, favored for its robust performance in power amplification applications.
Features
1. Power Output: It delivers a nominal output power of 10 W, making it suitable for various RF amplification tasks.
2. Gain: The transistor provides a linear gain of approximately 14 dB, ensuring efficient signal amplification.
3. Impedance: It has a typical input impedance of 50 ohms, simplifying integration into RF systems.
4. Thermal Management: Constructed with a ceramic package, it offers improved thermal dissipation capabilities.
5. Efficiency: High efficiency at power levels contributes to reduced heat generation and prolonged operational life.
6. DC Specifications: Operates with a collector-emitter voltage of up to 50 V, with biasing requirements that support stable performance.
The MRF158 is widely used in commercial and military RF applications, including communication systems and radar equipment, due to its robustness and reliability.
Package
Pinout
1. Pin 1 (Gate): This pin is used to control the transistor's operation. A voltage applied to the gate modulates the flow of current between the drain and source, enabling the amplification of RF signals.
2. Pin 2 (Drain): This is the output pin where the amplified RF signal is delivered. It is connected to the RF load, allowing the power output for transmission.
3. Pin 3 (Source): This pin is connected to the ground or the reference potential. It completes the circuit and helps in stabilizing the device's operation.
In summary, the MRF158 is a three-pin device with gate, drain, and source functionalities designed for high-frequency RF applications.
Manufacturer
Application
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