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MRF177
FET RF 2CH 65V 400MHZ 744A-01
- 제조업체
- Mfr.부분 #MRF177
- 패키지 744A-01
- 데이터시트 MRF177 DataSheet
- 재고 있음4720
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RFQ 및더 많은 할인
사양
| Package | Tray |
| ProductStatus | Active |
| TransistorType | 2 N-Channel (Dual) Common Source |
| Frequency | 400MHz |
| Gain | 12dB |
| Voltage-Test | 28 V |
| CurrentRating(Amps) | 16A |
| Current-Test | 200 mA |
| Power-Output | 100W |
| Voltage-Rated | 65 V |
| Package/Case | 744A-01 |
개요
Description
This transistor operates in Class C mode, providing high efficiency and power output. Its specifications typically include a maximum collector current of around 10A and a maximum collector-emitter voltage of about 50V. Users appreciate its ruggedness and reliability in demanding environments.
To ensure optimal performance, proper heat sinking and careful circuit design are essential. The MRF177 is part of a broader line of RF transistors, which may offer various power levels and frequency ranges, making it a versatile choice for engineers and hobbyists looking to build or repair RF systems.
Features
1. Frequency Range: Operates effectively from 30 MHz to 300 MHz, making it suitable for FM radio transmitters and other RF applications.
2. Power Output: Delivers a maximum output power of around 20 watts, ideal for high-power amplification.
3. Transistor Type: N-channel enhancement-mode MOSFET, providing high input impedance and low distortion.
4. Operating Voltage: Supports a maximum collector-to-emitter voltage of 60V, allowing flexibility in power supply configurations.
5. Package Type: Typically available in a metal can or TO-220 package, facilitating effective heat dissipation.
6. Thermal Stability: Designed for reliable operation under varying thermal conditions, ensuring durability and performance consistency.
These features make the MRF177 a popular choice for RF amplification in commercial and amateur radio applications, as well as in other electronic systems requiring robust RF performance.
Package
Pinout
### Pin Count:
- 8 Pins
### Pin Functions:
1. Base (B) - Input for the control signal.
2. Emitter (E) - Common terminal for the transistor; typically connected to ground.
3. Collector (C) - Output terminal for the amplified signal.
4. Collector (C) - Additional collector terminal for improved performance.
5. Base (B) - Second base terminal for biasing and stability.
6. Emitter (E) - Second emitter terminal, used for enhanced thermal performance.
7. Ground (GND) - Connection for circuit ground.
8. Heatsink (HS) - For thermal management, often attached to a heatsink.
These pins facilitate the transistor's operation in RF applications by enabling proper biasing and amplification of signals.
Manufacturer
Application
Equivalent
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