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MRFX1K80HR5
RF MOSFET LDMOS 65V NI-1230H-4S
- 제조업체
- Mfr.부분 #MRFX1K80HR5
- 패키지 SOT1787-1
- 데이터시트 MRFX1K80HR5 DataSheet
- 재고 있음3910
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365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | LDMOS (Dual) |
| Frequency | 1.8MHz ~ 470MHz |
| Gain | 24dB |
| Voltage-Test | 65 V |
| CurrentRating(Amps) | 10µA |
| Current-Test | 200 mA |
| Power-Output | 1800W |
| Voltage-Rated | 182 V |
| Package/Case | SOT-979A |
개요
Description
Key features of the MRFX1K80HR5 include its robust construction, thermal stability, and enhanced performance characteristics, which result in lower distortion and improved signal integrity. The transistor is typically available in a metal package for better heat dissipation and is designed to operate under harsh conditions. Its high gain and efficiency make it an excellent choice for RF amplification in demanding environments, ensuring optimal performance and longevity.
Overall, the MRFX1K80HR5 is an essential component for engineers looking to design reliable RF power systems.
Features
1. Power Output: Capable of delivering up to 1 kW of output power, making it suitable for high-power RF amplifiers.
2. High Gain: Offers significant gain, enhancing efficiency and performance in amplification tasks.
3. Durability: Designed for robustness, it can withstand harsh operating conditions, ensuring longevity in demanding applications.
4. Package Type: Available in a metal package, which aids in effective heat dissipation and thermal management.
5. Efficiency: Engineered for high efficiency, minimizing power loss during operation.
6. Applications: Commonly used in industrial, scientific, and medical (ISM) applications, as well as in RF and microwave communications.
Overall, the MRFX1K80HR5 is well-suited for applications requiring reliable high-frequency performance and significant power output.
Package
Pinout
1. Gate (G): Controls the switching of the transistor.
2. Drain (D): The output terminal where the RF signal is delivered.
3. Source (S): The reference terminal for the gate voltage, completing the circuit.
The device is often used in RF amplification, such as in communication systems and transmitters. It is known for its high efficiency and capability to handle high power levels, making it suitable for various RF applications. For detailed specifications, it is advisable to refer to the manufacturer's datasheet.
Manufacturer
Application
Equivalent
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