MT29F2G08ABAEAWP-AATX:E

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MT29F2G08ABAEAWP-AATX:E

IC FLASH 2GBIT PARALLEL 48TSOP I

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  • Mfr.부분 #MT29F2G08ABAEAWP-AATX:E
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사양

Part Status Last Time Buy
Base Product Number MT29F2G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 105°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

개요

Description

MT29F2G08ABAEAWP-AATX:E is Micron’s 2‑gigabit NAND flash memory (x8 data bus) with an ONFI-compatible interface. It stores data in pages (typically 2 KB) organized into blocks and supports standard NAND operations: read, program, erase, plus multi‑plane access. ECC is required by most controllers to correct bit errors. It’s used as storage in embedded systems and consumer devices, offering low‑power operation and scalable density. The suffix -AATX indicates the package type/temperature grade for this particular variant; the final -E? denotes the engineering/label revision of the variant. For exact page size, block structure, timing, voltages, endurance, and packaging details, refer to the MT29F2G08ABAEAWP datasheet and the -AATX packaging/temprature guide.

Features

MT29F2G08ABAEAWP-AATX:E features (concise):
- Density: 2 Gbit (256 MB) NAND flash
- Cell type: Multi-Level Cell (MLC)
- Interface: ONFI-compliant, x8 data bus, asynchronous
- Organization: 2 KB page size with 64-byte OOB (spare)
- Erase blocks: 128 KB per block
- Endurance/retention: ~10k P/E cycles; data retention ~10 years
- Operating voltage: typical 3.3V (range ~2.7–3.6V)
- Temperature grade: Extended range, -40°C to 85°C
- Reliability features: Bad Block Management (BBM), wear leveling; ECC via controller
- Applications: suitable for embedded/mobile storage requiring ruggedness and density
Note: exact timings and internal ECC specifics are controller-dependent; refer to the official datasheet for precise electrical characteristics and timing.

Package

A 48-pin TSOP (Thin Small Outline Package) NAND flash package.

Pinout

- Pin count: 48 pins (TSOP/FDI package variant MT29F2G08ABAEAWP-AATX:E)
- Function: 2‑Gbit NAND Flash memory (ONFI-compatible) with 8‑bit data I/O. Non-volatile storage device using a multiplexed address/command interface (DQ0–DQ7) with control signals CLE, ALE, WE#, RE#, CE#, WP#, R/B#; supplies typically include Vcc/Vccq and GND.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- Company type: An American multinational semiconductor company that designs and manufactures memory and storage technologies (e.g., DRAM and NAND flash).

Application

MT29F2G08ABAEAWP-AATX:E is a 2-Gbit NAND flash designed for embedded storage. Key application areas include:
- Embedded storage in consumer electronics (phones, tablets)
- Digital cameras/camcorders
- USB drives and memory cards
- Set-top boxes and game consoles
- Automotive/industrial infotainment and firmware storage

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