이미지는 참조용만

MT29F2G16ABAEAWP-IT:E

Name: MT29F2G16ABAEAWP-IT:E
Rating: 4.7 (12 reviews)

IC FLASH 2GBIT PARALLEL 48TSOP I

제조업체
Mfr.부분 #MT29F2G16ABAEAWP-IT:E
패키지
데이터시트
재고 있음2515

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Part Status	Obsolete
Base Product Number	MT29F2G16
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND
Memory Size	2Gbit
Memory Organization	128M x 16
Memory Interface	Parallel
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	48-TSOP I
Packaging	Bulk

개요

Description

The MT29F2G16ABAEAWP-IT:E is a 2Gb (gigabit) NAND flash memory device from Micron Technology. It is part of the NAND Flash family, designed for high-density storage applications. This particular model features a 16-bit data bus and is optimized for performance in various consumer and industrial applications, such as smartphones, tablets, and solid-state drives (SSDs).
Key features include:
- Interface: It supports a Serial Peripheral Interface (SPI) for easy integration into systems.
- Endurance and Reliability: The device is designed for high durability, offering thousands of program/erase cycles.
- Low Power Consumption: It operates efficiently, making it suitable for battery-powered devices.
- Temperature Range: The "IT" in the part number indicates that it is intended for industrial temperature ranges, ensuring reliability in harsh conditions.
Overall, the MT29F2G16ABAEAWP-IT:E is a reliable choice for applications requiring compact, high-performance storage solutions.

Features

The MT29F2G16ABAEAWP-IT:E is a NAND Flash memory device from Micron's 2Gb (2 gigabit) NAND Flash family. Key features include:
1. Density: 2Gb capacity, suitable for various applications.
2. Organization: Typically organized as 128 pages of 16K bytes each or 256 pages of 8K bytes each.
3. Interface: Supports a parallel interface, making it compatible with various controllers.
4. Multilevel Cell (MLC): Stores multiple bits per cell, balancing capacity and cost.
5. Endurance: Generally supports up to 3,000 program/erase cycles.
6. Data Retention: Typically offers a data retention period of about 10 years.
7. Operating Voltage: Generally operates within a voltage range of 2.7V to 3.6V.
8. Temperature Range: Designed for industrial applications, often with an extended temperature range.
This device is widely used in applications like smartphones, tablets, and embedded systems due to its reliability and performance.

Package

The MT29F2G16ABAEAWP-IT:E is a NAND flash memory chip packaged in a 48-ball BGA (Ball Grid Array) configuration. This package type is designed for compact integration on PCBs, providing efficient thermal and electrical performance.

Pinout

The MT29F2G16ABAEAWP-IT:E is a NAND Flash memory chip from Micron Technology. It features a pin count of 48 pins.
The primary functions of these pins include:
- Data I/O (DQ0-DQ7): 8 data input/output lines for data transfer.
- Command Input (CLE): Command latch enable, used to indicate the start of a command.
- Address Input (ALE): Address latch enable, used to indicate the start of an address.
- Chip Enable (CE): Activates the chip for communication.
- Write Enable (WE): Controls write operations.
- Read Enable (RE): Controls read operations.
- Ready/Busy (R/B): Indicates the status of the chip (ready or busy).
- Ground (GND): Common ground connection.
- Power Supply (VCC): Power supply input.
This chip operates in various configurations and is typically used in applications requiring non-volatile memory storage.

Manufacturer

The manufacturer of the MT29F2G16ABAEAWP-IT:E is Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in memory and storage solutions, including DRAM, NAND flash memory, and storage technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, automotive, mobile, and consumer electronics. The company is recognized for its innovation in memory technologies and plays a critical role in the global supply chain for semiconductor components.

Application

The MT29F2G16ABAEAWP-IT:E is a NAND flash memory device primarily used in applications such as mobile phones, tablets, consumer electronics, automotive systems, and industrial applications. Its high-density storage and reliability make it suitable for data storage in solid-state drives (SSDs), firmware updates, and multimedia content. Additionally, it supports various embedded applications where efficient memory management is crucial.

Equivalent

The MT29F2G16ABAEAWP-IT:E chip is a 2Gb NAND Flash memory device. Equivalent products include the Samsung K9GAG08U0D (2Gb NAND Flash), Toshiba TH58TGB8D2JBAIL, and Micron MT29F2G16ABAEAWP. Always check specifications such as package type, voltage, and interface compatibility for exact replacements.