이미지는 참조용만

MT29F2G16ABBEAHC-AIT:E

Name: MT29F2G16ABBEAHC-AIT:E
Rating: 4.7 (12 reviews)

IC FLASH 2GBIT PARALLEL 63VFBGA

제조업체
Mfr.부분 #MT29F2G16ABBEAHC-AIT:E
패키지
데이터시트
재고 있음4463

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Part Status	Last Time Buy
Base Product Number	MT29F2G16
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND
Memory Size	2Gbit
Memory Organization	128M x 16
Memory Interface	Parallel
Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package	63-VFBGA
Supplier Device Package	63-VFBGA (10.5x13)
Packaging	Tray

개요

Description

The MT29F2G16ABBEAHC-AIT:E is a NAND Flash memory chip produced by Micron Technology. It features a 2GB storage capacity and utilizes a 3D NAND architecture, which enhances performance and endurance by stacking memory cells vertically. This chip operates using a serial interface, specifically ONFI (Open NAND Flash Interface) 4.0, allowing for high-speed data transfer and efficient management of data storage and retrieval.
Designed for applications requiring reliable flash memory, the MT29F2G16ABBEAHC-AIT:E is suitable for a variety of devices, including smartphones, tablets, and other consumer electronics. Its low power consumption makes it ideal for battery-operated devices. The chip also supports advanced features such as wear leveling and error correction, ensuring data integrity and prolonging lifespan.
Overall, this NAND Flash memory chip combines high capacity, performance efficiency, and reliability, making it a preferred choice in the embedded systems market.

Features

The MT29F2G16ABBEAHC-AIT:E is a NAND Flash memory device produced by Micron Technology. It features a 2 Gb (gigabit) capacity with a 1-bit per cell architecture, often employing MLC (Multi-Level Cell) technology. This device operates with a supply voltage of 2.7V to 3.6V and supports various interfaces, including ONFI (Open NAND Flash Interface), enabling high-speed data transfer rates.
Key features include:
- Density: 2 Gb NAND Flash memory.
- Form Factor: Typically available in a compact package suitable for various applications.
- Performance: Offers fast read speeds and efficient write cycles, promoting enhanced data throughput.
- Endurance: Designed for consumer and industrial applications, providing a reliable solution for storage needs.
- Power Management: Low power consumption, extending battery life in portable devices.
This device is suitable for applications such as smartphones, tablets, and other embedded systems requiring efficient and reliable flash storage.

Package

The MT29F2G16ABBEAHC-AIT:E is packaged in a 48-ball VFBGA (Very Fine Ball Grid Array) format. This package type is designed for compact integration on circuit boards, offering high-density connections and improved thermal performance.

Pinout

The MT29F2G16ABBEAHC-AIT:E is a NAND flash memory device with a pin count of 48 pins. This device features a 2Gb (2 gigabit) capacity and supports a wide range of functions, primarily used for data storage in various applications such as mobile devices, consumer electronics, and embedded systems.
Key functions include:
1. Data Storage: It provides non-volatile storage for data retention without power.
2. Read/Write Operations: Supports random and sequential read/write operations.
3. Block Management: Includes features for wear leveling and bad block management to enhance reliability.
4. Interface: Utilizes a parallel NAND interface for communication with host systems.
This device is designed for high-density applications with a focus on efficiency and performance.

Manufacturer

The manufacturer of the MT29F2G16ABBEAHC-AIT:E is Micron Technology, Inc. Micron is an American company that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and other semiconductor products. Established in 1978 and headquartered in Boise, Idaho, Micron is one of the largest manufacturers of memory chips globally. The company serves various markets, including computing, mobile, automotive, and industrial sectors, and is known for its innovations in memory technology.

Application

The MT29F2G16ABBEAHC-AIT:E is a NAND flash memory device used in various applications, including mobile phones, tablets, consumer electronics, SSDs, and automotive systems. It provides high-density storage for data-intensive applications, enabling efficient storage solutions in embedded systems, portable devices, and IoT applications. Its reliability and performance make it suitable for both consumer and industrial use cases.

Equivalent

The MT29F2G16ABBEAHC-AIT:E chip is a 2Gb NAND Flash memory. Equivalent products include:
1. Samsung K9GAG08U0M
2. Hynix H26M52002G
3. Toshiba TC58NVG1S3H
4. Micron MT29F2G16ABAEAWP
Always verify compatibility with specific requirements before replacement.