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MT29F4G08ABAEAH4:E
IC FLASH 4GBIT PARALLEL 63VFBGA
- 제조업체
- Mfr.부분 #MT29F4G08ABAEAH4:E
- 패키지
- 데이터시트
- 재고 있음6733
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Part Status | Obsolete |
| Base Product Number | MT29F4G08 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Packaging | Bulk |
개요
Description
Key characteristics of the MT29F4G08ABAEAH4:E include its high-density storage capability and endurance, which refers to the number of write/erase cycles the memory can undergo before it becomes unreliable. It utilizes a multi-level cell (MLC) technology, which stores more than one bit per cell, enhancing its data density compared to single-level cell (SLC) technologies.
The device operates on standard NAND interface protocols, making it compatible with a wide range of applications, from consumer electronics to industrial and automotive systems. This model is also designed to support error correction codes (ECC) to maintain data integrity over time. Additionally, its small form factor and low power consumption make it suitable for use in embedded systems and portable devices.
Features
This device supports asynchronous operations, providing flexibility in data management and storage. It operates at a voltage range of 2.7V to 3.6V, making it suitable for various electronic applications. The chip comes in a TSOP (Thin Small Outline Package) form factor, which is compact and widely used in consumer electronics.
MT29F4G08ABAEAH4:E offers features like error correction code (ECC) support, wear leveling, and bad block management to enhance data integrity and longevity. These features make it ideal for embedded systems, industrial applications, and consumer electronics requiring robust data storage solutions.
Package
Pinout
Key functions of these pins include:
- Data Inputs/Outputs (I/O0-I/O7): 8 pins for bidirectional data transfer.
- CLE (Command Latch Enable): Used to latch command inputs.
- ALE (Address Latch Enable): Used to latch address inputs.
- CE# (Chip Enable): Activates the memory device.
- RE# (Read Enable): Controls data output during read operations.
- WE# (Write Enable): Controls data input during write operations.
- WP# (Write Protect): Protects against accidental programming/erasure.
- R/B# (Ready/Busy): Indicates the status of the device operations.
- VCC: Power supply input.
- VSS: Ground reference.
These pin functions are integral to managing data storage operations in NAND flash memory, allowing for reading, writing, and erasing processes necessary for device functionality.
Manufacturer
Application
Equivalent
1. Samsung K9F4G08U0D
2. Toshiba TC58NVG3S0H
3. Hynix H27U4G8F2CTR
These equivalents typically have similar storage capacity, interface, and form factor. However, always verify compatibility based on the specific requirements of your application.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
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