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MT35XU512ABA1G12-0SIT

Name: MT35XU512ABA1G12-0SIT
Rating: 4.7 (12 reviews)

IC FLASH 512MBIT SPI/OCT 24TPBGA

제조업체
Mfr.부분 #MT35XU512ABA1G12-0SIT
패키지
데이터시트
재고 있음7148

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Part Status	Active
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	512Mbit
Memory Organization	64M x 8
Memory Interface	SPI - Octal I/O
Write Cycle Time - Word, Page	2.8ms
Voltage - Supply	1.7V ~ 2V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	24-TBGA
Supplier Device Package	24-T-PBGA (6x8)
Base Product Number	MT35XU512
Clock Frequency	200 MHz
Access Time	6 ns

개요

Description

The MT35XU512ABA1G12-0SIT is a high-performance, 512Mb (64MB) NAND flash memory device manufactured by Micron Technology. It is part of the MT35 series, designed for applications requiring reliable data storage and high-speed performance. This NAND flash is based on 2-bit per cell (MLC) technology, which allows for a balance between storage capacity and durability.
Key features include a 1.8V and 3.3V I/O voltage support, advanced error correction capabilities, and support for both synchronous and asynchronous interfaces. The device is suitable for various embedded applications, including smartphones, tablets, and IoT devices. Its compact form factor and low power consumption make it ideal for space-constrained environments.
Overall, the MT35XU512ABA1G12-0SIT offers a robust solution for modern digital storage needs, combining efficiency with high reliability.

Features

The MT35XU512ABA1G12-0SIT is a 512Mb (64MB) NAND Flash memory device from Micron Technology. Key features include:
1. Interface: It uses a Toggle NAND interface for high-speed data transfer.
2. Density: Offers 512Mb of storage capacity, suitable for various applications.
3. Package: Available in a compact 48-ball BGA (Ball Grid Array) package for space-efficient designs.
4. Voltage: Operates typically at 3.3V, ensuring compatibility with many devices.
5. Endurance: Designed for high endurance, generally supporting a substantial number of program/erase cycles.
6. Performance: Provides fast read and write speeds, making it ideal for applications requiring quick data access.
7. Data Reliability: Features incorporate error correction codes (ECC) to enhance data integrity.
8. Applications: Commonly used in consumer electronics, mobile devices, and automotive applications where reliable storage is critical.
This device is suitable for applications needing a balance of performance, capacity, and reliability.

Package

The MT35XU512ABA1G12-0SIT is packaged in a 48-ball FBGA (Fine Ball Grid Array) format. This type of packaging is designed for high-density applications, providing efficient heat dissipation and space optimization on circuit boards.

Pinout

The MT35XU512ABA1G12-0SIT is a NAND flash memory device from Micron Technology. It features a pin count of 48 pins.
The primary functions of the device include:
1. Data Storage: It provides non-volatile storage for data, retaining information even when the power is off.
2. Memory Interface: The device interfaces with host systems using a standard NAND command set.
3. Read/Write Operations: It supports multiple read and write operations, allowing for efficient data management.
4. Block Management: It includes internal algorithms for wear leveling and bad block management to enhance reliability and lifespan.
This device is typically used in various applications such as consumer electronics, mobile devices, and embedded systems where reliable storage is essential.

Manufacturer

The manufacturer of the MT35XU512ABA1G12-0SIT is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company produces a variety of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). Micron serves a diverse range of markets, including consumer electronics, data centers, automotive, and industrial applications. Founded in 1978 and headquartered in Boise, Idaho, Micron is recognized for its innovation and commitment to advancing memory technology.

Application

The MT35XU512ABA1G12-0SIT is a high-density memory component primarily used in applications such as consumer electronics, automotive systems, industrial automation, and telecommunications. It is suitable for data storage in smartphones, tablets, embedded systems, and IoT devices, providing efficient performance for data-intensive applications.

Equivalent

The MT35XU512ABA1G12-0SIT chip is a 512Mb NAND Flash memory device. Equivalent products may include:
1. Micron MT29F512G08CBABA
2. Micron MT29F512G08CBAA
3. Samsung K9GAG08U0M
Ensure to verify specifications like pin configuration, voltage, and performance characteristics for compatibility.