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MT40A2G4SA-062E:R

Name: MT40A2G4SA-062E:R
Rating: 4.7 (12 reviews)

MOD DRAM 8GBIT PARALLEL 78FBGA

제조업체
Mfr.부분 #MT40A2G4SA-062E:R
패키지 FBGA-78
데이터시트
재고 있음3174

+BOM은 RFQ는

100% 원래 &새로운

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365 일 보장

RFQ 및더 많은 할인

사양

Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR4
MemorySize	8Gb (2G x 4)
MemoryInterface	Parallel
ClockFrequency	1.6 GHz
WriteCycleTime-WordPage	15ns
AccessTime	19 ns
Voltage-Supply	1.14V ~ 1.26V
OperatingTemperature	0°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	78-TFBGA

개요

Description

The MT40A2G4SA-062E:R is a high-performance DRAM (Dynamic Random Access Memory) module produced by Micron Technology. This component is part of the DDR4 (Double Data Rate 4) memory family, designed for use in a variety of computing applications, including desktops, laptops, and servers.
Key specifications include:
- Capacity: 8GB (Gigabytes)
- Data Rate: 2400 MT/s (Mega Transfers per second), indicating a fast data transfer capability.
- Voltage: Operates at 1.2V, which contributes to energy efficiency.
- Form Factor: Typically available in DIMM (Dual In-line Memory Module) or SO-DIMM (Small Outline DIMM) configurations, depending on the application.
This memory module is ideal for enhancing system performance, enabling faster data processing and improved multitasking capabilities. It is compatible with a wide range of motherboards and supports various memory architectures, making it a versatile choice for both consumer and enterprise systems.

Features

The MT40A2G4SA-062E is a 4GB DDR3 SDRAM memory module manufactured by Micron Technology. Key features include:
1. Type: DDR3 SDRAM.
2. Capacity: 4GB.
3. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
4. Configuration: 512 Meg x 64 bits organization, suitable for dual-channel memory architectures.
5. Voltage: Operates at a low voltage of 1.5V, which helps in power savings.
6. Form Factor: SO-DIMM, designed for laptops and compact devices.
7. Compatibility: Compatible with various laptops and motherboards that support DDR3.
8. Latency: CL11, which indicates the number of clock cycles it takes to access data.
9. ECC: Usually, modules like this may support ECC (Error Correction Code) for improved reliability in server or workstation environments, but specific support should be verified based on application.
Overall, the MT40A2G4SA-062E is ideal for enhancing performance in memory-intensive applications.

Package

The MT40A2G4SA-062E:R is packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This type of package is used for high-density memory chips, providing efficient thermal performance and space-saving design suitable for various applications, including mobile devices and memory modules.

Pinout

The MT40A2G4SA-062E:R is a DDR4 SDRAM device from Micron Technology. It has a pin count of 78 pins and is designed in a 78-ball FBGA (Fine Pitch Ball Grid Array) package.
The primary functions of this memory chip include providing high-speed data transfer rates and increased bandwidth for applications requiring efficient memory performance. It operates at a voltage of 1.2V, supports data rates of up to 2400 MT/s, and offers a capacity of 2 Gb (Gigabits). The device features multiple banks (typically 16) to allow for simultaneous data access, enhancing its performance in computing environments. It also supports advanced features like on-die termination and a burst length of 8, making it suitable for a variety of applications, including mobile devices, laptops, and servers.

Manufacturer

The manufacturer of the MT40A2G4SA-062E:R is Micron Technology, Inc. Micron is a leading American producer of computer memory and data storage solutions, including DRAM, NAND flash memory, and SSDs. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of markets, including computing, mobile, automotive, and industrial applications. The company is recognized for its innovation in memory technologies and plays a significant role in the global semiconductor industry.

Application

The MT40A2G4SA-062E:R is a DDR4 SDRAM memory chip used in various application areas, including servers, networking equipment, industrial automation, telecommunications, and high-performance computing. Its high speed and efficiency make it suitable for data-intensive tasks, such as cloud computing and big data analytics, as well as in consumer electronics like PCs and gaming systems.

Equivalent

The MT40A2G4SA-062E:R chip, a 2GB DDR3 SDRAM, can have equivalent products such as:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646F-BCRC
3. Micron MT41K256M16HA-125
4. Nanya NT5CB256M16DP-DI
Ensure compatibility in terms of specifications like speed, voltage, and package type when selecting alternatives.